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- Suh, Joonki
- Semiconductor Nanotechnology Lab.
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Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory
- Author(s)
- Ko, Changhyun, Lee, Yeonbae, Chen, Yabin, Suh, Joonki, Fu, Deyi, Suslu, Aslihan, Lee, Sangwook, Clarkson, James David, Choe, Hwan Sung, Tongay, Sefaatin, Ramesh, Ramamoorthy, Wu, Junqiao
- Issued Date
- 2016-04
- Citation
- ADVANCED MATERIALS, v.28, no.15, pp.2923 - 2930
- Abstract
- Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.
- Publisher
- WILEY-V C H VERLAG GMBH
- ISSN
- 0935-9648
- Keyword (Author)
- 2D materials, ferroelectrics, field-effect transistors, nonvolatile memory, transition-metal dichalcogenides
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