File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

서준기

Suh, Joonki
Semiconductor Nanotechnology Lab.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Full metadata record

DC Field Value Language
dc.citation.number 10 -
dc.citation.startPage 102101 -
dc.citation.title APPLIED PHYSICS LETTERS -
dc.citation.volume 111 -
dc.contributor.author Liu, Huili -
dc.contributor.author Choe, Hwan Sung -
dc.contributor.author Chen, Yabin -
dc.contributor.author Suh, Joonki -
dc.contributor.author Ko, Changhyun -
dc.contributor.author Tongay, Sefaattin -
dc.contributor.author Wu, Junqiao -
dc.date.accessioned 2023-12-21T21:43:47Z -
dc.date.available 2023-12-21T21:43:47Z -
dc.date.created 2019-07-17 -
dc.date.issued 2017-09 -
dc.description.abstract Black phosphorus (BP) is a layered semiconductor with a high mobility of up to similar to 1000 cm(2) V(-1)s(-1) and a narrow bandgap of similar to 0.3 eV, and shows potential applications in thermoelectrics. In stark contrast to most other layered materials, electrical and thermoelectric properties in the basal plane of BP are highly anisotropic. To elucidate the mechanism for such anisotropy, we fabricated BP nanoribbons (similar to 100 nm thick) along the armchair and zigzag directions, and measured the transport properties. It is found that both the electrical conductivity and Seebeck coefficient increase with temperature, a behavior contradictory to that of traditional semiconductors. The three-dimensional variable range hopping model is adopted to analyze this abnormal temperature dependency of electrical conductivity and Seebeck coefficient. The hopping transport of the BP nanoribbons, attributed to high density of trap states in the samples, provides a fundamental understanding of the anisotropic BP for potential thermoelectric applications. -
dc.identifier.bibliographicCitation APPLIED PHYSICS LETTERS, v.111, no.10, pp.102101 -
dc.identifier.doi 10.1063/1.4985333 -
dc.identifier.issn 0003-6951 -
dc.identifier.scopusid 2-s2.0-85028926057 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/27081 -
dc.identifier.url https://aip.scitation.org/doi/10.1063/1.4985333 -
dc.identifier.wosid 000410059200013 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Physics, Applied -
dc.relation.journalResearchArea Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus FIELD-EFFECT TRANSISTORS -
dc.subject.keywordPlus POWER -
dc.subject.keywordPlus CONDUCTIVITY -
dc.subject.keywordPlus HEAT -
dc.subject.keywordPlus MOS2 -

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.