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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 111 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 106 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 39 | - |
dc.contributor.author | Lee, J | - |
dc.contributor.author | Lee, S | - |
dc.contributor.author | Ahn, Y | - |
dc.contributor.author | Ha, D | - |
dc.contributor.author | Koh, G | - |
dc.contributor.author | Jeong, H | - |
dc.contributor.author | Chung, T | - |
dc.contributor.author | Kim, K | - |
dc.date.accessioned | 2023-12-22T11:43:22Z | - |
dc.date.available | 2023-12-22T11:43:22Z | - |
dc.date.created | 2019-07-11 | - |
dc.date.issued | 2001-07 | - |
dc.description.abstract | A novel memory cel landing pad technology is developed for the 0.13-mum DRAM (dynamic random access memory) generation and beyond. Compared to conventional landing pad technology, this novel cell landing pad technology achieves a lower contact resistance between the contact pad and the source/drain of the memory cell transistor and better isolation between the word-line and the contact pads. The low-temperature interlayer dieletric process with gap-fill capability is achieved in this work by using a multi-step deposition with a high-density plasma chemical vapor deposition oxide. the tight alignment tolerance, which can not be met in the conventional scheme., is achieved by using a novel bar-type contact hole opening pattern and a wet dip process in this technology. Moreover, we adopted the modified SAC (self-aligned contact) process, in which SAC etching is followed by word-line spacer formation. With this modified SAC process, we could reduce the loss due to the capping nitride on the word-line. Thus, we could solve the problem of isolation between the word-line and the counter pads. the superior properties of this novel landing pad technology were demonstrated with the 0.13-mum DRAM generation. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.106 - 111 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.scopusid | 2-s2.0-0035600802 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27065 | - |
dc.identifier.url | http://www.jkps.or.kr/journal/view.html?uid=4465&vmd=Full | - |
dc.identifier.wosid | 000169870600024 | - |
dc.language | 영어 | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | New integration technology of a cell landing pad for the 0.13-mu m DRAM generation and beyond | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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