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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 629 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 624 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 40 | - |
dc.contributor.author | Chun, Y | - |
dc.contributor.author | Park, JS | - |
dc.contributor.author | Jang, SM | - |
dc.contributor.author | Park, SG | - |
dc.contributor.author | Hwang, YS | - |
dc.contributor.author | Jeong, HS | - |
dc.contributor.author | Kim, K | - |
dc.date.accessioned | 2023-12-22T11:38:33Z | - |
dc.date.available | 2023-12-22T11:38:33Z | - |
dc.date.created | 2019-07-11 | - |
dc.date.issued | 2002-04 | - |
dc.description.abstract | As the density of a DRAM increases to the giga-bit scale, the height of the cell capacitor node is increased more than 1 mum. As a result, the depth of the metal contact on the active area is increased more than 2 mum. For a 4-giga-bit DRAM with a 0.10 gm minimum feature size, the depth of the metal contact on the active area is more than 3 mum, due to the increased capacitor height and planarized inter-layer-dielectric layer, which is the critical etch depth for a reliable process margin. Also. the landing pad scheme for the metal contact cannot be applied to a DRAM with a 0.10 mum minimum feature size and beyond due to the lack of a space margin between the landing pad and neighboring bit-lines. To solve these issues. we developed a novel borderless metal contact process using self-stopping layer in 4-giga-bit DRAM with good contact resistance. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, no.4, pp.624 - 629 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.scopusid | 2-s2.0-0036012683 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27064 | - |
dc.identifier.wosid | 000175022300018 | - |
dc.language | 영어 | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Novel borderless metal contact process using a self-stopping layer for a 4Gb DRAM and beyond | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.identifier.kciid | ART001195839 | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.description.journalRegisteredClass | kci_candi | - |
dc.subject.keywordAuthor | metal contact | - |
dc.subject.keywordAuthor | landing pad | - |
dc.subject.keywordAuthor | self-stopping layer | - |
dc.subject.keywordAuthor | borderless contact | - |
dc.subject.keywordAuthor | giga-bit density | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
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