File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Suh, Joonki
- Semiconductor Nanotechnology Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.citation.number | 1 | - |
| dc.citation.startPage | 012108 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 98 | - |
| dc.contributor.author | Levander, A. X. | - |
| dc.contributor.author | Tong, T. | - |
| dc.contributor.author | Yu, K. M. | - |
| dc.contributor.author | Suh, J. | - |
| dc.contributor.author | Fu, D. | - |
| dc.contributor.author | Zhang, R. | - |
| dc.contributor.author | Lu, H. | - |
| dc.contributor.author | Schaff, W. J. | - |
| dc.contributor.author | Dubon, O. | - |
| dc.contributor.author | Walukiewicz, W. | - |
| dc.contributor.author | Cahill, D. G. | - |
| dc.contributor.author | Wu, J. | - |
| dc.date.accessioned | 2023-12-22T06:36:53Z | - |
| dc.date.available | 2023-12-22T06:36:53Z | - |
| dc.date.created | 2019-07-17 | - |
| dc.date.issued | 2011-01 | - |
| dc.description.abstract | In contrast to most semiconductors, electrical conductivity of InN is known to increase upon high-energy particle irradiation. The effects of irradiation on its thermal and thermoelectric properties have yet to be investigated. Here we report the thermal conductivity of high-quality InN to be 120 W/m K and examine the effects of point defects generated by irradiation on the thermal conductivity and Seebeck coefficient. We show that irradiation can be used to modulate the thermal and thermoelectric properties of InN by controlling point defect concentrations. The thermoelectric figure of merit of InN was found to be insensitive to irradiation. | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.98, no.1, pp.012108 | - |
| dc.identifier.doi | 10.1063/1.3536507 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.scopusid | 2-s2.0-78651272938 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27061 | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3536507 | - |
| dc.identifier.wosid | 000286009800037 | - |
| dc.language | 영어 | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Effects of point defects on thermal and thermoelectric properties of InN | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.type.docType | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | THERMOREFLECTANCE | - |
| dc.subject.keywordPlus | SEMICONDUCTORS | - |
| dc.subject.keywordPlus | TRANSPORT | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.subject.keywordPlus | GAP | - |
| dc.subject.keywordPlus | CONDUCTIVITY | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.