Energy-level engineering of the electron transporting layer for improving open-circuit voltage in dye and perovskite-based solar cells

Abstract

Next-generation solar cells, such as dye-sensitized solar cells (DSSCs) and perovskite solar cells (PSCs), are fabricated in a configuration where light absorbers are located between the electron transporting layer (ETL) and the hole transporting layer (HTM). Although the most efficient DSSCs and PSCs have been fabricated using TiO 2 as the ETL, TiO 2 exhibits inherently low electron mobility with difficulty controlling the energy levels (i.e., conduction and valence bands) as it possesses a single phase of two components. Here, we report the synthesis of Sr-substituted BaSnO 3 (BSSO) by a low-temperature solution process as a new alternative to TiO 2 for both PSCs and DSSCs. The energy-level tailoring by Sr incorporation into BaSnO 3 minimizes the open-circuit voltage (V OC ) loss at the interfaces of ETL/perovskite and ETL/electrolyte in the PSCs and DSSCs, thereby leading to an improved V OC from 0.65 to 0.72 V in DSSC and 1.07 to 1.13 V in PSCs. Additionally, the BSSO ETL-based PSC shows improved photostability compared to the TiO 2 analog. Our results show that energy-level tuned BSSO can be applied as a universal ETL for improving efficiency in both PSCs and DSSCs.