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Lee, Kyuho Jason
Intelligent Systems Lab.
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DC Field Value Language
dc.citation.endPage 3112 -
dc.citation.number 7 -
dc.citation.startPage 307 -
dc.citation.title NATURE ELECTRONICS -
dc.citation.volume 2 - Jeong, Jae Won - Choi, Young Eun - Kim, Woo Seok - Park, Jee-Ho - Kim, Sunmean - Shin, Sunhae - Lee, Kyuho - Chang, Jiwon - Kim, Seong-Jin - Kim, Kyung Rok - 2023-12-21T19:02:35Z - 2023-12-21T19:02:35Z - 2019-07-04 - 2019-07 -
dc.description.abstract The power density limits of complementary metal–oxide–semiconductor (CMOS) technology could be overcome by moving from a binary to a ternary logic system. However, ternary devices are typically based on multi-threshold voltage schemes, which make the development of power-scalable and mass-producible ternary device platforms challenging. Here we report a wafer-scale and energy-efficient ternary CMOS technology. Our approach is based on a single threshold voltage and relies on a third voltage state created using an off-state constant current that originates from quantum-mechanical band-to-band tunnelling. This constant current can be scaled down to a sub-picoampere level under a low applied voltage of 0.5 V. Analysis of a ternary CMOS inverter illustrates the variation tolerance of the third intermediate output voltage state, and its symmetric in–out voltage-transfer characteristics allow integrated circuits with ternary logic and memory latch-cell functions to be demonstrated. -
dc.identifier.bibliographicCitation NATURE ELECTRONICS, v.2, no.7, pp.307 - 3112 -
dc.identifier.doi 10.1038/s41928-019-0272-8 -
dc.identifier.issn 2520-1131 -
dc.identifier.scopusid 2-s2.0-85069442467 -
dc.identifier.uri -
dc.identifier.url -
dc.identifier.wosid 000476813900012 -
dc.language 영어 -
dc.title Tunnelling-based ternary metal–oxide–semiconductor technology -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic -
dc.relation.journalResearchArea Engineering -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus MULTIPLE-VALUED LOGIC -
dc.subject.keywordPlus DESIGN -
dc.subject.keywordPlus CMOS -
dc.subject.keywordPlus MOSFETS -
dc.subject.keywordPlus FETS -


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