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DC Field | Value | Language |
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dc.citation.endPage | 6334 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 6327 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY A | - |
dc.citation.volume | 1 | - |
dc.contributor.author | Park, Hye-Yun | - |
dc.contributor.author | Lim, Dongchan | - |
dc.contributor.author | Kim, Kwang-Dae | - |
dc.contributor.author | Jang, Sung-Yeon | - |
dc.date.accessioned | 2023-12-22T03:44:05Z | - |
dc.date.available | 2023-12-22T03:44:05Z | - |
dc.date.created | 2019-05-16 | - |
dc.date.issued | 2013-06 | - |
dc.description.abstract | High-performance solution-processable ZnO thin films for use as electron-transporting layers (ETLs) of inverted-structured polymer solar cells (I-PSCs) are developed via a low-temperature annealing (<200 degrees C) sol-gel process. The properties of the low-temperature-annealed ZnO (L-ZnO) thin films (used as ETLs) are optimized based on the evaluation of the roles of the internal nanocrystal (NC) orientation and film-surface morphology in charge transport/transfer in I-PSCs. The low-temperature annealing conditions (dynamic annealing or static annealing) could be successfully manipulated to alter the NC orientation of the L-ZnO films, whereas tactical control of the precursor-coating conditions enabled the embedding of nanoripples on the film surfaces. Suppression of the preferential (002) plane NC orientation of the L-ZnO layers is beneficial for charge transport in I-PSCs; these devices should be evaluated in a manner different from field-effect transistors (FETs). The performance of ETLs is further enhanced by the development of nanoripple-embedded L-ZnO film surfaces, which furnish an increased area for contact with the active layers. The I-PSCs fabricated using the optimized L-ZnO films display a >20% higher power-conversion efficiency (PCE) than those employing the conventional L-ZnO films for a range of active materials including poly(3-hexylthiophene) (P3HT)/[6,6]-phenyl-C61-butyric acid methyl ester (PC60BM) and poly(thienothiophene-co-benzodithiophenes)7-F20 (PTB7-F20)/phenyl-C71-butyric acid methyl ester (PC71BM) blends. A PCE of 6.42% is achieved for the I-PSCs using the optimized L-ZnO films and PTB7-F20/PC71BM blends as the ETL and active materials, respectively. This study presents a universal method for optimizing sol-gel-driven ZnO-based ETLs, whilst the low-temperature processability and long-term stability of the developed ETLs are beneficial for the commercialization of I-PSCs. | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY A, v.1, no.21, pp.6327 - 6334 | - |
dc.identifier.doi | 10.1039/c3ta10637c | - |
dc.identifier.issn | 2050-7488 | - |
dc.identifier.scopusid | 2-s2.0-84877650306 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/26801 | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2013/TA/c3ta10637c#!divAbstract | - |
dc.identifier.wosid | 000318565700004 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Performance optimization of low-temperature-annealed solution-processable ZnO buffer layers for inverted polymer solar cells | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Energy & Fuels; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Energy & Fuels; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | OPEN-CIRCUIT VOLTAGE | - |
dc.subject.keywordPlus | ORGANIC PHOTOVOLTAICS | - |
dc.subject.keywordPlus | ORIENTATION | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | BARRIERS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | DIODES | - |
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