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DC Field | Value | Language |
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dc.citation.endPage | 17382 | - |
dc.citation.number | 31 | - |
dc.citation.startPage | 17374 | - |
dc.citation.title | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.citation.volume | 118 | - |
dc.contributor.author | Park, Hye-Yun | - |
dc.contributor.author | Ryu, Ilhwan | - |
dc.contributor.author | Kim, Jinhyun | - |
dc.contributor.author | Jeong, Sohee | - |
dc.contributor.author | Yim, Sanggyu | - |
dc.contributor.author | Jang, Sung-Yeon | - |
dc.date.accessioned | 2023-12-22T02:14:41Z | - |
dc.date.available | 2023-12-22T02:14:41Z | - |
dc.date.created | 2019-05-16 | - |
dc.date.issued | 2014-08 | - |
dc.description.abstract | ZnO thin films fabricated by a low-temperature sol-gel conversion method (L-ZnO) were employed as n-type electron-transporting layers (ETLs) in depleted-heterojunction quantum dot solar cells (DH-QDSCs). Thin films of PbS (similar to 200 run) fabricated by spin-coating a colloidal PbS QD solution layer by layer were used as the p-type photoactive layers. The L-ZnO films functioned as efficient n-type ETLs by fully completely depleting the PbS active layers, and they displayed performances much higher than those of conventional ZnO nanoparticle-based ETLs. The morphologies and chemical compositions of the L-ZnO ETLs varied with the annealing conditions. These factors, in turn, had a marked effect on the charge-transfer characteristics at the L-ZnO/PbS interfaces of the DH-QDSCs. The power conversion efficiency (PCE) of the DH-QDSCs using the optimized L-ZnO films as ETLs was 3.93%, with the fill factor (FF) being 0.60, whereas the PCE of the cells using the ZnO nanoparticle-based films was 1.62%, with the FF being 0.53. Thus, the sol-gel-derived L-ZnO films, which could be fabricated using a simple, low-temperature, solution-based process, exhibited desirable performance as ETLs in DH-QDSCs. | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICAL CHEMISTRY C, v.118, no.31, pp.17374 - 17382 | - |
dc.identifier.doi | 10.1021/jp504156c | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.scopusid | 2-s2.0-84905818912 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/26795 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/jp504156c | - |
dc.identifier.wosid | 000340222300022 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | PbS Quantum Dot Solar Cells Integrated with Sol-Gel-Derived ZnO as an n-Type Charge-Selective Layer | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | RAY PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject.keywordPlus | POWER CONVERSION EFFICIENCY | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | BUFFER LAYER | - |
dc.subject.keywordPlus | PHOTOVOLTAICS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | XPS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
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