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장성연

Jang, Sung-Yeon
Renewable Energy and Nanoelectronics Lab.
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dc.citation.endPage 35249 -
dc.citation.number 41 -
dc.citation.startPage 35244 -
dc.citation.title ACS APPLIED MATERIALS & INTERFACES -
dc.citation.volume 10 -
dc.contributor.author Azmi, Randi -
dc.contributor.author Seo, Gabseok -
dc.contributor.author Ahn, Tae Kyu -
dc.contributor.author Jang, Sung-Yeon -
dc.date.accessioned 2023-12-21T20:08:14Z -
dc.date.available 2023-12-21T20:08:14Z -
dc.date.created 2019-05-16 -
dc.date.issued 2018-10 -
dc.description.abstract High-efficiency colloidal quantum dot (CQD) solar cells (CQDSCs) with improved air stability were developed by employing potassium-modified ZnO as an electron-accepting layer (EAL). The effective potassium modification was achievable by a simple treatment with a KOH solution of pristine ZnO films prepared by a low-temperature solution process. The resulting K-doped ZnO (ZnO-K) exhibited EAL properties superior to those of a pristine ZnO-EAL. The Fermi energy level of ZnO was upshifted, which increased the internal electric field and amplified the depletion region (i.e., charge drift) of the devices. The surface defects of ZnO were effectively passivated by K modification, which considerably suppressed interfacial charge recombination. The CQDSC based on ZnO-K achieved improved power conversion efficiency (PCE) of approximate to 10.75% (V-OC of 0.67 V, J(SC) of 23.89 mA cm(2), and fill factor of 0.68), whereas the CQDSC based on pristine ZnO showed PCE of 9.97%. Moreover, the suppressed surface defects of ZnO-K substantially improved long-term stability under air. The device using ZnO-K exhibited superior long-term air storage stability (96% retention after 90 days) compared to that using pristine ZnO (88% retention after 90 days). The ZnO-K-based device also exhibited improved photostability under air. Under continuous light illumination for 600 min, the ZnO-K-based device retained 96% of its initial PCE, whereas the pristine ZnO-based device retained only 67%. -
dc.identifier.bibliographicCitation ACS APPLIED MATERIALS & INTERFACES, v.10, no.41, pp.35244 - 35249 -
dc.identifier.doi 10.1021/acsami.8b12577 -
dc.identifier.issn 1944-8244 -
dc.identifier.scopusid 2-s2.0-85054603635 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/26757 -
dc.identifier.url https://pubs.acs.org/doi/10.1021/acsami.8b12577 -
dc.identifier.wosid 000447954600045 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title High-Efficiency Air-Stable Colloidal Quantum Dot Solar Cells Based on a Potassium-Doped ZnO Electron-Accepting Layer -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Nanoscience & Nanotechnology; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Science & Technology - Other Topics; Materials Science -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor quantum dots solar cells -
dc.subject.keywordAuthor potassium doped -
dc.subject.keywordAuthor zinc oxide -
dc.subject.keywordAuthor fermi level -
dc.subject.keywordAuthor stability -
dc.subject.keywordPlus ZINC-OXIDE -
dc.subject.keywordPlus IMPROVED PERFORMANCE -
dc.subject.keywordPlus TRANSPORTING LAYER -
dc.subject.keywordPlus METAL-OXIDE -
dc.subject.keywordPlus PHOTOVOLTAICS -
dc.subject.keywordPlus PHOTOCURRENT -
dc.subject.keywordPlus PASSIVATION -
dc.subject.keywordPlus OPEN-CIRCUIT VOLTAGE -

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