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Lee, Zonghoon
Atomic-Scale Electron Microscopy Lab.
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dc.citation.endPage 2826 -
dc.citation.number 5 -
dc.citation.startPage 2821 -
dc.citation.title NANOSCALE -
dc.citation.volume 6 -
dc.contributor.author Lee, Youngbin -
dc.contributor.author Lee, Jinhwan -
dc.contributor.author Bark, Hunyoung -
dc.contributor.author Oh, Il-Kwon -
dc.contributor.author Ryu, Gyeong Hee -
dc.contributor.author Lee, Zonghoon -
dc.contributor.author Kim, Hyungjun -
dc.contributor.author Cho, Jeong Ho -
dc.contributor.author Ahn, Jong-Hyun -
dc.contributor.author Lee, Changgu -
dc.date.accessioned 2023-12-22T02:47:27Z -
dc.date.available 2023-12-22T02:47:27Z -
dc.date.created 2014-04-03 -
dc.date.issued 2014-03 -
dc.description.abstract We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 10(5), a mobility of 0.12 cm(2) V (1) s (1) (mean mobility value of 0.07 cm(2) V-1 s(-1)), and reliable operation. -
dc.identifier.bibliographicCitation NANOSCALE, v.6, no.5, pp.2821 - 2826 -
dc.identifier.doi 10.1039/c3nr05993f -
dc.identifier.issn 2040-3364 -
dc.identifier.scopusid 2-s2.0-84894641277 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/2672 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84894641277 -
dc.identifier.wosid 000332127200041 -
dc.language 영어 -
dc.publisher ROYAL SOC CHEMISTRY -
dc.title Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science; Physics -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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