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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 2826 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 2821 | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 6 | - |
dc.contributor.author | Lee, Youngbin | - |
dc.contributor.author | Lee, Jinhwan | - |
dc.contributor.author | Bark, Hunyoung | - |
dc.contributor.author | Oh, Il-Kwon | - |
dc.contributor.author | Ryu, Gyeong Hee | - |
dc.contributor.author | Lee, Zonghoon | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.contributor.author | Cho, Jeong Ho | - |
dc.contributor.author | Ahn, Jong-Hyun | - |
dc.contributor.author | Lee, Changgu | - |
dc.date.accessioned | 2023-12-22T02:47:27Z | - |
dc.date.available | 2023-12-22T02:47:27Z | - |
dc.date.created | 2014-04-03 | - |
dc.date.issued | 2014-03 | - |
dc.description.abstract | We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 10(5), a mobility of 0.12 cm(2) V (1) s (1) (mean mobility value of 0.07 cm(2) V-1 s(-1)), and reliable operation. | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.6, no.5, pp.2821 - 2826 | - |
dc.identifier.doi | 10.1039/c3nr05993f | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.scopusid | 2-s2.0-84894641277 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/2672 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84894641277 | - |
dc.identifier.wosid | 000332127200041 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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