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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices

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Title
Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices
Author
Jeong, Hu YoungKim, Sung KyuLee, Jeong YongChoi, Sung-Yool
Keywords
Amorphous TiO; Device performance; Diffusion kinetics; Heat of formation; Interface reactions; Interfacial layer; Memory performance; Metal electrodes; Oxygen affinity; Oxygen ions; Resistive switching; TiO; Titanium oxide layer
Issue Date
2011-08
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.10, pp.H979 - H982
Abstract
We investigated the effect of top metals on the bipolar resistive switching of Metal/amorphous TiO 2/Al devices to understand the role of interface chemical reaction between top metal electrode and titanium oxide layer. The Al device of the highest oxygen affinity showed superior memory performance to other devices, which can be attributed to fast formation of interfacial layer (Al-Ti-O), as confirmed by high resolution transmission electron microscopy and electron dispersive spectroscopy. We concluded that diffusion kinetics of the oxygen ions between top metal electrode and amorphous TiO 2 layer determine the device performance of Metal/amorphous TiO 2/Al as well as thermodynamics (Heat of formation).
URI
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DOI
10.1149/1.3622295
ISSN
0013-4651
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SE_Journal Papers
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