Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices
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- Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices
- Jeong, Hu Young; Kim, Sung Kyu; Lee, Jeong Yong; Choi, Sung-Yool
- Amorphous TiO; Device performance; Diffusion kinetics; Heat of formation; Interface reactions; Interfacial layer; Memory performance; Metal electrodes; Oxygen affinity; Oxygen ions; Resistive switching; TiO; Titanium oxide layer
- Issue Date
- ELECTROCHEMICAL SOC INC
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.10, pp.H979 - H982
- We investigated the effect of top metals on the bipolar resistive switching of Metal/amorphous TiO 2/Al devices to understand the role of interface chemical reaction between top metal electrode and titanium oxide layer. The Al device of the highest oxygen affinity showed superior memory performance to other devices, which can be attributed to fast formation of interfacial layer (Al-Ti-O), as confirmed by high resolution transmission electron microscopy and electron dispersive spectroscopy. We concluded that diffusion kinetics of the oxygen ions between top metal electrode and amorphous TiO 2 layer determine the device performance of Metal/amorphous TiO 2/Al as well as thermodynamics (Heat of formation).
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