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최영빈

Tchoe, Youngbin
Neural Interfaces and Semiconductor Optoelectronics Lab
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Flexible resistive random access memory devices by using NiOx/GaN microdisk arrays fabricated on graphene films

Author(s)
Lee, KeundongPark, Jong-wooTchoe, YoungbinYoon, JiyoungChung, KunookYoon, HosangLee, SangikYoon, ChansooPark, Bae HoYi, Gyu-Chul
Issued Date
2017-05
DOI
10.1088/1361-6528/aa6763
URI
https://scholarworks.unist.ac.kr/handle/201301/26368
Fulltext
https://iopscience.iop.org/article/10.1088/1361-6528/aa6763/meta
Citation
NANOTECHNOLOGY, v.28, no.20, pp.205202
Abstract
We report flexible resistive random access memory (ReRAM) arrays fabricated by using NiOx/GaN microdisk arrays on graphene films. The ReRAM device was created from discrete GaN microdisk arrays grown on graphene films produced by chemical vapor deposition, followed by deposition of NiOx thin layers and Au metal contacts. The microdisk ReRAM arrays were transferred to flexible plastic substrates by a simple lift-off technique. The electrical and memory characteristics of the ReRAM devices were investigated under bending conditions. Resistive switching characteristics, including cumulative probability, endurance, and retention, were measured. After 1000 bending repetitions, no significant change in the device characteristics was observed. The flexible ReRAM devices, constructed by using only inorganic materials, operated reliably at temperatures as high as 180 degrees C.
Publisher
IOP PUBLISHING LTD
ISSN
0957-4484
Keyword (Author)
non-volatile memoryflexible inorganic electronicsgrapheneGaNNiO
Keyword
GANELECTRONICSOVERGROWTHLAYERS

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