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DC Field | Value | Language |
---|---|---|
dc.citation.title | NPG ASIA MATERIALS | - |
dc.citation.volume | 9 | - |
dc.contributor.author | Chung, Kunook | - |
dc.contributor.author | Oh, Hongseok | - |
dc.contributor.author | Jo, Janghyun | - |
dc.contributor.author | Lee, Keundong | - |
dc.contributor.author | Kim, Miyoung | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.accessioned | 2023-12-21T22:07:16Z | - |
dc.date.available | 2023-12-21T22:07:16Z | - |
dc.date.created | 2019-03-14 | - |
dc.date.issued | 2017-07 | - |
dc.description.abstract | Single-crystal gallium nitride (GaN) layers were directly grown on centimeter-scale hexagonal boron nitride (h-BN). Using chemical vapor deposition (CVD), centimeter-scale h-BN films were synthesized on a single-crystal Ni(111) and readily transferred onto amorphous fused silica supporting substrates that had no epitaxial relationship with GaN. For growing fully coalescent GaN layers on h-BN, the achievement of high-density crystal growths was a critical growth step because the sp(2)-bonded h-BN layers are known to be free of dangling bonds. Unlike GaN layers grown on a typical heterogeneous sapphire substrate, the morphological and microstructural results strongly suggest a high-density growth feature that is driven by the atomic cliffs inherent in the CVD-grown h-BN layers. More importantly, the GaN layers grown on CVD-grown h-BN exhibited a flat and continuous surface morphology with well-aligned crystal orientations both along the c-axis and in-plane, indicating the characteristics of GaN heteroepitaxy on h-BN. | - |
dc.identifier.bibliographicCitation | NPG ASIA MATERIALS, v.9 | - |
dc.identifier.doi | 10.1038/am.2017.118 | - |
dc.identifier.issn | 1884-4049 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/26366 | - |
dc.identifier.url | https://www.nature.com/articles/am2017118 | - |
dc.identifier.wosid | 000406941100002 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Transferable single-crystal GaN thin films grown on chemical vapor-deposited hexagonal BN sheets | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | DER-WAALS EPITAXY | - |
dc.subject.keywordPlus | BORON-NITRIDE | - |
dc.subject.keywordPlus | GRAPHENE LAYERS | - |
dc.subject.keywordPlus | ZNO NANOSTRUCTURES | - |
dc.subject.keywordPlus | EVOLUTION | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | DEVICES | - |
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