Color mixing from monolithically integrated InGaN-based light-emitting diodes by local strain engineering

Abstract

Additive color mixing across the visible spectrum was demonstrated from an InGaN based light-emitting diode (LED) pixel comprising red, green, and blue subpixels monolithically integrated and enabled by local strain engineering. The device was fabricated using a top-down approach on a metal-organic chemical vapor deposition-grown sample consisting of a typical LED epitaxial stack. The three color subpixels were defined in a single lithographic step. The device was characterized for its electrical properties and emission spectra under an uncooled condition, which is desirable in practical applications. The color mixing was controlled by pulse-width modulation, and the degree of color control was also characterized.