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정건욱

Chung, Kunook
Mixed Dimensional Materials and Devices Lab.
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Understanding luminescence properties of grain boundaries in GaN thin films and their atomistic origin

Author(s)
Yoo, HyobinYoon, SangmoonChung, KunookKang, Seoung-HunKwon, Young-KyunYi, Gyu-ChulKim, Miyoung
Issued Date
2018-03
DOI
10.1063/1.5018598
URI
https://scholarworks.unist.ac.kr/handle/201301/26355
Fulltext
https://aip.scitation.org/doi/10.1063/1.5018598
Citation
APPLIED PHYSICS LETTERS, v.112, no.13, pp.131901
Abstract
We report our findings on the optical properties of grain boundaries in GaN films grown on graphene layers and discuss their atomistic origin. We combine electron backscatter diffraction with cathodoluminescence to directly correlate the structural defects with their optical properties, enabling the high-precision local luminescence measurement of the grain boundaries in GaN films. To further understand the atomistic origin of the luminescence properties, we carefully probed atomic core structures of the grain boundaries by exploiting aberration-corrected scanning transmission electron microscopy. The atomic core structures of grain boundaries show different ordering behaviors compared with those observed previously in threading dislocations. Energetics of the grain boundary core structures and their correlation with electronic structures were studied by first principles calculation. Published by AIP Publishing.
Publisher
AMER INST PHYSICS
ISSN
0003-6951
Keyword
LIGHT-EMITTING-DIODESTHREADING EDGE DISLOCATIONLAYERED COMPOUNDGRAPHENE LAYERSGROWTHDEFECTSHETEROSTRUCTURESMOLYBDENUMEMISSIONNITRIDE

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