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Kim, Dai-Sik
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Giant Field Enhancements in Ultrathin Nanoslots above 1 Terahertz

DC Field Value Language Kim, Dasom ko Jeong, Jeeyoon ko Choi, Geunchang ko Bahk, Young-Mi ko Kang, Taehee ko Lee, Dukhyung ko Thusa, Bidhek ko Kim, Dai-Sik ko 2019-05-14T06:29:17Z - 2019-03-11 ko 2018-05 ko
dc.identifier.citation ACS PHOTONICS, v.5, no.5, pp.1885 - 1890 ko
dc.identifier.issn 2330-4022 ko
dc.identifier.uri -
dc.description.abstract Strong demand for plasmonic devices with an enormously enhanced electric field and desired resonance frequencies has led to extensive investigations of metallic slot structures. While strong field enhancement can be achieved by reducing the width of the slot, the effect of the gap surface plasmon limits the maximum achievable field enhancement at higher frequencies. Specifically, the effect of the gap surface plasmon becomes stronger as the gap width decreases and strongly suppresses the transmission while causing a red shift of the resonance. Here, we overcome these issues and realize strong field enhancements at higher frequencies, by managing the metal thickness of the nanoslots. We show that, as the nanoslots become as thin as 10 nm, they show a giant electric field enhancement of up to 7600. Moreover, the resonances are strongly blue-shifted to above 1 THz from 0.33 THz. Our work provides a novel route to achieving high field enhancements at desired frequencies, as well as a means by which to characterize the slot as the gap-sensitive or substrate-sensitive type. ko
dc.language 영어 ko
dc.publisher AMER CHEMICAL SOC ko
dc.title Giant Field Enhancements in Ultrathin Nanoslots above 1 Terahertz ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-85046549318 ko
dc.identifier.wosid 000432751800037 ko
dc.type.rims ART ko
dc.identifier.doi 10.1021/acsphotonics.8b00151 ko
dc.identifier.url ko
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