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Kim, Dai-Sik
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Enhanced Surface Carrier Response by Field Overlapping in Metal Nanopatterned Semiconductor

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dc.contributor.author Choi, Geunchang ko
dc.contributor.author Kang, Taehee ko
dc.contributor.author Seo, Minah ko
dc.contributor.author Kim, Dai-Sik ko
dc.contributor.author Bahk, Young-Mi ko
dc.date.available 2019-05-14T06:29:14Z -
dc.date.created 2019-03-11 ko
dc.date.issued 2018-12 ko
dc.identifier.citation ACS PHOTONICS, v.5, no.12, pp.4739 - 4744 ko
dc.identifier.issn 2330-4022 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/26345 -
dc.description.abstract We demonstrate photoexcited carrier response of metallic nanogap-patterned semiconductor using optical pump-terahertz probe spectroscopy. Metallic nanogap facilitates observing surface carrier dynamics of bulk semiconductors by means of strong field confinement and enhancement of electromagnetic waves at nanoscale. Here, we observe that the enhanced terahertz transmission change of photoexcited InP has a nonmonotonic behavior (increases and then decreases) as reducing the gap size, which originates from different field confinement of near-infrared light (pump) and terahertz waves (probe). This 5 observation is theoretically reproduced by our simple model which informs that one can obtain the maximum pump probe signal at the condition in which the field overlapping of two different electromagnetic waves used in the pump probe experiment becomes maximized. Our results pave the way toward designing nanogap-based optical devices operated by multiwavelength electromagnetic waves. ko
dc.language 영어 ko
dc.publisher AMER CHEMICAL SOC ko
dc.title Enhanced Surface Carrier Response by Field Overlapping in Metal Nanopatterned Semiconductor ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-85058813657 ko
dc.identifier.wosid 000454463000003 ko
dc.type.rims ART ko
dc.identifier.doi 10.1021/acsphotonics.8b00724 ko
dc.identifier.url https://pubs.acs.org/doi/10.1021/acsphotonics.8b00724 ko
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