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남궁선

Namgung, Seon
Quantum Device Lab.
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dc.citation.endPage 10506 -
dc.citation.number 11 -
dc.citation.startPage 10500 -
dc.citation.title ACS NANO -
dc.citation.volume 10 -
dc.contributor.author Namgung, Seon -
dc.contributor.author Shaver, Jonah -
dc.contributor.author Oh, Sang-Hyun -
dc.contributor.author Koester, Steven J. -
dc.date.accessioned 2023-12-21T23:07:07Z -
dc.date.available 2023-12-21T23:07:07Z -
dc.date.created 2019-03-04 -
dc.date.issued 2016-11 -
dc.description.abstract With strong light matter interaction in their atomically thin layered structures, two-dimensional (2D) materials have been widely investigated for optoelectronic applications such as photodetectors and photovoltaic devices. Depending on the aim of optoelectronic applications, different device structures have been employed. Lateral phototransistor structures have been employed for high optical gain, while vertical photodiode structures have been employed for fast response and low power operation. Herein, we demonstrate a multimodal photodetector platform based on 2D materials, combining both a phototransistor and a photodiode and taking the corresponding desirable characteristics from each structure within a single device. In this platform, a multilayered transition-metal dichalcogenide flake is transferred on top of metal electrodes, and a transparent gate electrode is employed. The channel region of the flake between electrodes operates as a phototransistor providing a high gain mode, while the electrode region in the same flake operates as a vertical Schottky photodiode providing a fast response mode. These modes can be dynamically selected by controlling the drain voltage and gate voltage. -
dc.identifier.bibliographicCitation ACS NANO, v.10, no.11, pp.10500 - 10506 -
dc.identifier.doi 10.1021/acsnano.6b06468 -
dc.identifier.issn 1936-0851 -
dc.identifier.scopusid 2-s2.0-84997174197 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/26304 -
dc.identifier.url https://pubs.acs.org/doi/10.1021/acsnano.6b06468 -
dc.identifier.wosid 000388913100082 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title Multimodal Photodiode and Phototransistor Device Based on Two-Dimensional Materials -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor multimodal -
dc.subject.keywordAuthor photodiode -
dc.subject.keywordAuthor phototransistor -
dc.subject.keywordAuthor 2D materials -
dc.subject.keywordAuthor Schottky barrier -
dc.subject.keywordPlus TRANSITION-METAL DICHALCOGENIDES -
dc.subject.keywordPlus SCANNING PHOTOCURRENT MICROSCOPY -
dc.subject.keywordPlus FIELD-EFFECT TRANSISTORS -
dc.subject.keywordPlus MONOLAYER MOS2 -
dc.subject.keywordPlus GRAPHENE -
dc.subject.keywordPlus PHOTODETECTORS -
dc.subject.keywordPlus GENERATION -
dc.subject.keywordPlus GAIN -
dc.subject.keywordPlus HETEROSTRUCTURES -
dc.subject.keywordPlus SEMICONDUCTORS -

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