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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 9332 | - |
dc.citation.number | 42 | - |
dc.citation.startPage | 9326 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 28 | - |
dc.contributor.author | Son, Donghee | - |
dc.contributor.author | Chae, Sue In | - |
dc.contributor.author | Kim, Myungbin | - |
dc.contributor.author | Choi, Moon Kee | - |
dc.contributor.author | Yang, Jiwoong | - |
dc.contributor.author | Park, Kunsu | - |
dc.contributor.author | Kale, Vinayak S. | - |
dc.contributor.author | Koo, Ja Hoon | - |
dc.contributor.author | Choi, Changsoon | - |
dc.contributor.author | Lee, Minbaek | - |
dc.contributor.author | Kim, Ji Hoon | - |
dc.contributor.author | Hyeon, Taeghwan | - |
dc.contributor.author | Kim, Dae-Hyeong | - |
dc.date.accessioned | 2023-12-21T23:07:07Z | - |
dc.date.available | 2023-12-21T23:07:07Z | - |
dc.date.created | 2019-02-28 | - |
dc.date.issued | 2016-11 | - |
dc.description.abstract | Large-scale colloidal synthesis and integration of uniform-sized molybdenum disulfi de (MoS2) nanosheets for a fl exible resistive random access memory (RRAM) array are presented. RRAM using MoS2 nano sheets shows a approximate to 10 000 times higher on/off ratio than that based on exfoliated MoS2. The good uniformity of the MoS2 nanosheets allows wafer-scale system integration of the RRAM array with pressure sensors and quantum-dot light-emitting diodes. | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.28, no.42, pp.9326 - 9332 | - |
dc.identifier.doi | 10.1002/adma.201602391 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.scopusid | 2-s2.0-84994268357 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/26238 | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201602391 | - |
dc.identifier.wosid | 000391174600008 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Colloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | RESISTIVE MEMORY | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | LAYER MOS2 | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | PHOTOTRANSISTORS | - |
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