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박장웅

Park, Jang-Ung
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dc.citation.endPage 4243 -
dc.citation.number 27 -
dc.citation.startPage 4236 -
dc.citation.title JOURNAL OF MATERIALS CHEMISTRY C -
dc.citation.volume 1 -
dc.contributor.author Jeong, Sunho -
dc.contributor.author Lee, Ji-Yoon -
dc.contributor.author Lee, Sun Sook -
dc.contributor.author Seo, Yeong-Hui -
dc.contributor.author Kim, So-Yun -
dc.contributor.author Park, Jang-Ung -
dc.contributor.author Ryu, Beyong-Hwan -
dc.contributor.author Yang, Wooseok -
dc.contributor.author Moon, Jooho -
dc.contributor.author Choi, Youngmin -
dc.date.accessioned 2023-12-22T03:42:52Z -
dc.date.available 2023-12-22T03:42:52Z -
dc.date.created 2013-08-27 -
dc.date.issued 2013-07 -
dc.description.abstract We report the previously unrecognized co-solvent, formamide (FA), which can comprehensively improve both the device performance and bias stability of metal salt-derived, solution-processed In-Ga-Zn-O (IGZO) TFTs. By incorporating FA in IGZO precursor solutions, the chemical structures are tailored adequately for reducing the content of hydroxide and encouraging the oxygen vacancy formation, which has not been fulfilled in conventional chemical/physical approaches. Owing to such distinct chemical structural evolution, the field-effect mobility is enhanced dramatically by a factor of 4.3 (from 2.4 to 10.4 cm2 V -1 s-1), and the threshold voltage shift during a positive-bias stress test is suppressed effectively by a factor of 2.3 (from 9.3 to 4.1 V) for unpassivated devices. The addition of formamide to IGZO precursor solutions also facilitates electrohydrodynamic-jet (e-jet) printability, with which the directly printed device with a channel width of ∼30 μm is demonstrated successfully. In addition, a high performance, solution-processed IGZO transistor with a mobility of 50 cm2 V-1 s -1 is suggested through coupling a FA-added IGZO oxide semiconductor with a solution-processed zirconium aluminum oxide ((Zr,Al)2O x) gate dielectric. -
dc.identifier.bibliographicCitation JOURNAL OF MATERIALS CHEMISTRY C, v.1, no.27, pp.4236 - 4243 -
dc.identifier.doi 10.1039/c3tc30530a -
dc.identifier.issn 2050-7526 -
dc.identifier.scopusid 2-s2.0-84879954623 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/2616 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84879954623 -
dc.identifier.wosid 000320709200007 -
dc.language 영어 -
dc.publisher ROYAL SOC CHEMISTRY -
dc.title Metal salt-derived In-Ga-Zn-O semiconductors incorporating formamide as a novel co-solvent for producing solution-processed, electrohydrodynamic-jet printed, high performance oxide transistors -
dc.type Article -
dc.relation.journalWebOfScienceCategory Materials Science, Multidisciplinary; Physics, Applied -
dc.relation.journalResearchArea Materials Science; Physics -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus THIN-FILM TRANSISTORS -
dc.subject.keywordPlus FIELD-EFFECT TRANSISTORS -
dc.subject.keywordPlus LOW-TEMPERATURE FABRICATION -
dc.subject.keywordPlus ZINC-OXIDE -
dc.subject.keywordPlus SOL-GEL -
dc.subject.keywordPlus DOPED ZNO -
dc.subject.keywordPlus ELECTRICAL CHARACTERISTICS -
dc.subject.keywordPlus LOW-VOLTAGE -
dc.subject.keywordPlus TRANSPARENT -
dc.subject.keywordPlus DIELECTRICS -

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