File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 1503 | - |
| dc.citation.number | 19 | - |
| dc.citation.startPage | 1499 | - |
| dc.citation.title | IEICE ELECTRONICS EXPRESS | - |
| dc.citation.volume | 7 | - |
| dc.contributor.author | Cho, Seongjae | - |
| dc.contributor.author | Kang, In Man | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.date.accessioned | 2023-12-22T06:43:19Z | - |
| dc.date.available | 2023-12-22T06:43:19Z | - |
| dc.date.created | 2013-06-13 | - |
| dc.date.issued | 2010-10 | - |
| dc.description.abstract | We investigated the source-to-drain capacitance (C(sd)) due to DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channel SNW devices operating at high drain voltages have the positive value of C(sd) by DIBL effect. On the other hand, junctionless SNW MOSFETs without source/drain (S/D) PN junctions have negative or zero values by small DIBL effect. By considering the additional source-to-drain capacitance component, the accuracy of a small-signal model was significantly improved on the imaginary part of Y(22)-parameter. | - |
| dc.identifier.bibliographicCitation | IEICE ELECTRONICS EXPRESS, v.7, no.19, pp.1499 - 1503 | - |
| dc.identifier.doi | 10.1587/elex.7.1499 | - |
| dc.identifier.issn | 1349-2543 | - |
| dc.identifier.scopusid | 2-s2.0-77958169171 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/2587 | - |
| dc.identifier.url | https://www.jstage.jst.go.jp/article/elex/7/19/7_19_1499/_article/-char/ja/ | - |
| dc.identifier.wosid | 000282757200014 | - |
| dc.language | 영어 | - |
| dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
| dc.title | Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | TRUE | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.