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DC Field | Value | Language |
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dc.citation.endPage | 18245 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 18237 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 10 | - |
dc.contributor.author | Wu, Rui | - |
dc.contributor.author | Kursumovic, Ahmed | - |
dc.contributor.author | Gao, Xingyao | - |
dc.contributor.author | Yun, Chao | - |
dc.contributor.author | Vickers, Mary E | - |
dc.contributor.author | Wang, Haiyan | - |
dc.contributor.author | Cho, Seungho | - |
dc.contributor.author | MacManus-Driscoll, Judith L | - |
dc.date.accessioned | 2023-12-21T20:42:59Z | - |
dc.date.available | 2023-12-21T20:42:59Z | - |
dc.date.created | 2019-01-25 | - |
dc.date.issued | 2018-05 | - |
dc.description.abstract | Electric field control of magnetism is a critical future technology for low-power, ultrahigh density memory. However, despite intensive research efforts, no practical material systems have emerged. Interface-coupled, composite systems containing ferroelectric and ferri-/ferromagnetic elements have been widely explored, but they have a range of problems, for example, substrate clamping, large leakage, and inability to miniaturize. In this work, through careful material selection, design, and nanoengineering, a high-performance room-temperature magnetoelectric system is demonstrated. The clamping problem is overcome by using a vertically aligned nanocomposite structure in which the strain coupling is independent of the substrate. To overcome the leakage problem, three key novel advances are introduced: a low leakage ferroelectric, Na0.5Bi0.5TiO3; ferroelectric-ferrimagnetic vertical interfaces which are not conducting; and current blockage via a rectifying interface between the film and the Nb-doped SrTiO3 substrate. The new multiferroic nanocomposite (Na0.5Bi0.5TiO3-CoFe2O4) thin-film system enables, for the first time, large-scale in situ electric field control of magnetic anisotropy at room temperature in a system applicable for magnetoelectric random access memory, with a magnetoelectric coefficient of 1.25 × 10-9 s m-1. | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.10, no.21, pp.18237 - 18245 | - |
dc.identifier.doi | 10.1021/acsami.8b03837 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-85046723291 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/25821 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.8b03837 | - |
dc.identifier.wosid | 000434101200076 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Design of Vertical Composite Thin Film System with Ultralow Leakage to Yield Large Converse Magnetoelectric Effect | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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