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Ding, Feng
IBS - Center for Multidimensional Carbon Materials (CMCM)
Research Interests
  • Theoretical methods development for materials studies.

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Kinetics of Graphene and 2D Materials Growth

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Title
Kinetics of Graphene and 2D Materials Growth
Author
Dong, JichenZhang, LeiningDing, Feng
Issue Date
2019-03
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v.31, no.9, pp.1801583
Abstract
During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment-limited growth and diffusion-limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double-layer and few-layer 2D materials' growth, which has distinct features different from the growth of single-layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.
URI
https://scholarworks.unist.ac.kr/handle/201301/25665
URL
https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201801583
DOI
10.1002/adma.201801583
ISSN
0935-9648
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