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dc.citation.startPage 794876 -
dc.citation.title INTERNATIONAL JOURNAL OF PHOTOENERGY -
dc.citation.volume 2012 -
dc.contributor.author Park, Hyomin -
dc.contributor.author Tark, Sung Ju -
dc.contributor.author Kim, Chan Seok -
dc.contributor.author Park, Sungeun -
dc.contributor.author Do Kim, Young -
dc.contributor.author Son, Chang-Sik -
dc.contributor.author Lee, Jeong Chul -
dc.contributor.author Kim, Donghwan -
dc.date.accessioned 2023-12-22T05:37:15Z -
dc.date.available 2023-12-22T05:37:15Z -
dc.date.created 2013-06-17 -
dc.date.issued 2012-01 -
dc.description.abstract To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 mu s. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8mA/cm(2), respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers. -
dc.identifier.bibliographicCitation INTERNATIONAL JOURNAL OF PHOTOENERGY, v.2012, pp.794876 -
dc.identifier.doi 10.1155/2012/794876 -
dc.identifier.issn 1110-662X -
dc.identifier.scopusid 2-s2.0-84863256726 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/2560 -
dc.identifier.url https://www.hindawi.com/journals/ijp/2012/794876/ -
dc.identifier.wosid 000301249600001 -
dc.language 영어 -
dc.publisher HINDAWI PUBLISHING CORPORATION -
dc.title Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells -
dc.type Article -
dc.description.isOpenAccess TRUE -
dc.relation.journalWebOfScienceCategory Chemistry, Physical; Energy & Fuels; Optics; Physics, Atomic, Molecular & Chemical -
dc.relation.journalResearchArea Chemistry; Energy & Fuels; Optics; Physics -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus MULTICRYSTALLINE SILICON -
dc.subject.keywordPlus LIFETIME -
dc.subject.keywordPlus BLOCK -

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