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dc.citation.endPage 10 -
dc.citation.number 11 -
dc.citation.startPage 1 -
dc.citation.title IEICE ELECTRONICS EXPRESS -
dc.citation.volume 10 -
dc.contributor.author Ryu, Myunghwan -
dc.contributor.author Kim, Youngmin -
dc.date.accessioned 2023-12-22T04:07:06Z -
dc.date.available 2023-12-22T04:07:06Z -
dc.date.created 2013-07-05 -
dc.date.issued 2013-05 -
dc.description.abstract In this paper, a simple and accurate modeling technique that analyzes a non-rectilinear gate (NRG) transistor with a simplified trapezoidal approximation method is proposed. To approximate a non-rectangular channel shape into a trapezoidal shape, we extract three geometry-dependent parameters from post-lithographic patterns: the minimum channel length from the slices (Lmin), maximum channel length from the slices (Lmax), and effective channel width (Weff). We slice the NRG transistor gate along its width, sort these slices according to their sizes, and then use trapezoidal approximation. A physics-based technology computer aided design (TCAD) simulation is used to verify our model in a typical 45-nm process. The developed model requires fewer computations and less runtime as compared to the previous approaches. Therefore, a full chip post-lithography analysis (PLA) becomes feasible. -
dc.identifier.bibliographicCitation IEICE ELECTRONICS EXPRESS, v.10, no.11, pp.1 - 10 -
dc.identifier.doi 10.1587/elex.10.20130239 -
dc.identifier.issn 1349-2543 -
dc.identifier.scopusid 2-s2.0-84878956965 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/2530 -
dc.identifier.url https://www.jstage.jst.go.jp/article/elex/10/11/10_10.20130239/_article -
dc.identifier.wosid 000321672100003 -
dc.language 영어 -
dc.publisher IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG -
dc.title Trapezoidal approximation for on-current modeling of 45-nm non-rectilinear gate shape -
dc.type Article -
dc.description.isOpenAccess TRUE -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic -
dc.relation.journalResearchArea Engineering -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor NRG -
dc.subject.keywordAuthor effective length -
dc.subject.keywordAuthor effective width -
dc.subject.keywordAuthor post-lithography simulation -
dc.subject.keywordAuthor TCAD -

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