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Yoo, Jung-Woo
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Study of Rashba Spin-Orbit Field at LaAlO3/SrTiO3 Heterointerfaces

Author(s)
Jin, Mi-JinKim, Shin-IkMoon, Seon YoungChoe, DaeseongPark, JungminModepalli, VijayakumarJo, JunhyeonOh, InseonBaek, Seung-HyubYoo, Jung-Woo
Issued Date
2019-03
DOI
10.1007/s11664-018-6788-2
URI
https://scholarworks.unist.ac.kr/handle/201301/25197
Fulltext
https://link.springer.com/article/10.1007%2Fs11664-018-6788-2
Citation
JOURNAL OF ELECTRONIC MATERIALS, v.48, no.3, pp.1347 - 1352
Abstract
Oxide interfaces such as LaAlO3/SrTiO3 (LAO/STO) are interesting platforms for the investigation of ‘spin-orbitronics’ because of their strongly coupled spin and orbital degrees of freedom due to the inversion asymmetry of the structure. In this investigation, we demonstrate a tunable Rashba spin-orbit field at the LAO/STO interface via the application of an external gate electric field. The strength of the Rashba field was indirectly estimated by measuring the planar angle dependence of the anisotropic magnetoresistance (AMR). The asymmetry of the planar AMR between θ = 0 and π indicates the existence of Rashba spin-orbit fields, which are tunable by adjusting the current density and gate electric field. From the AMR measurements, the effective Rashba field exhibits up to 4 T for the application of an external back-gate voltage of 30 V. This controllable and relatively high Rashba field suggests that the LAO/STO is an attractive 2-D interface for potential spin-orbitronic applications, such as spin-charge converters, spin-FETs, and spin-orbit torque devices.
Publisher
SPRINGER
ISSN
0361-5235
Keyword (Author)
LAO/STOconductive oxide interfaceRashba spin-orbit interactionspin-orbitronicsoxide spintronics
Keyword
ELECTRON-GASSUPERCONDUCTIVITYFERROMAGNETISMCOEXISTENCECONVERSIONINTERFACELAYER

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