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김진국

Kim, Jingook
Integrated Circuit and Electromagnetic Compatibility Lab.
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dc.citation.endPage 39 -
dc.citation.number 1 -
dc.citation.startPage 29 -
dc.citation.title IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY -
dc.citation.volume 61 -
dc.contributor.author Park, Myungjoon -
dc.contributor.author Park, Junsik -
dc.contributor.author Choi, Jongcheul -
dc.contributor.author Kim, Jinwoo -
dc.contributor.author Jeong, Seonghoon -
dc.contributor.author Seung, Manho -
dc.contributor.author Lee, Seokkiu -
dc.contributor.author Kim, Jingook -
dc.date.accessioned 2023-12-21T19:39:19Z -
dc.date.available 2023-12-21T19:39:19Z -
dc.date.created 2018-10-31 -
dc.date.issued 2019-02 -
dc.description.abstract Voltage noise and operation errors in an integrated circuit (IC) due to electrostatic discharge (ESD) events were measured, validated, and analyzed in this paper. A simplified structure of a laptop personal computer and an IC with a D-type flip-flop were designed and manufactured for the experimental tests. Every signal input to the IC was simultaneously measured during the ESD tests, and validated with the simulated results using a full-wave solver and a simple circuit model. Next, SPICE simulations were conducted using the measured voltages with ESD tests. The output waveforms and the statistical occurrence ratios of the operation failures found from the SPICE simulations were compared with measured values. Furthermore, the effects of decoupling capacitors on the IC operation failures due to ESD were investigated. -
dc.identifier.bibliographicCitation IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, v.61, no.1, pp.29 - 39 -
dc.identifier.doi 10.1109/TEMC.2018.2815641 -
dc.identifier.issn 0018-9375 -
dc.identifier.scopusid 2-s2.0-85047210175 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/25114 -
dc.identifier.url https://ieeexplore.ieee.org/document/8360768 -
dc.identifier.wosid 000450188600004 -
dc.language 영어 -
dc.publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC -
dc.title Measurement and Analysis of Statistical IC Operation Errors in a Memory Module Due to System-Level ESD Noise -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic; Telecommunications -
dc.relation.journalResearchArea Engineering; Telecommunications -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Conduction noise -
dc.subject.keywordAuthor decoupling capacitor (de-cap) -
dc.subject.keywordAuthor dual in-line memory module (DIMM) -
dc.subject.keywordAuthor electrostatic discharge (ESD) -
dc.subject.keywordAuthor Electrostatic discharges -
dc.subject.keywordAuthor error ratio -
dc.subject.keywordAuthor flip-flop -
dc.subject.keywordAuthor Generators -
dc.subject.keywordAuthor Integrated circuit modeling -
dc.subject.keywordAuthor Noise measurement -
dc.subject.keywordAuthor Portable computers -
dc.subject.keywordAuthor shielding -
dc.subject.keywordAuthor soft failure -
dc.subject.keywordAuthor Voltage measurement -

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