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DC Field | Value | Language |
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dc.citation.endPage | 19020 | - |
dc.citation.number | 22 | - |
dc.citation.startPage | 19011 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 9 | - |
dc.contributor.author | Kim, Min Je | - |
dc.contributor.author | Choi, Shinyoung | - |
dc.contributor.author | Lee, Myeongjae | - |
dc.contributor.author | Heo, Hyojung | - |
dc.contributor.author | Lee, Youngu | - |
dc.contributor.author | Cho, Jeong Ho | - |
dc.contributor.author | Kim, BongSoo | - |
dc.date.accessioned | 2023-12-21T22:09:40Z | - |
dc.date.available | 2023-12-21T22:09:40Z | - |
dc.date.created | 2018-09-10 | - |
dc.date.issued | 2017-06 | - |
dc.description.abstract | In this Article, low-bandgap pTTDPP-BT polymers based on electron-accepting pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DPP) and benzothiadiazole (BT) and electron-donating thienothiophene (TT) moieties were synthesized. Phototransistors have been fabricated using ambipolar-behaving pTTDPP-BT polymers as active channel materials. The electrical and photoresponsive properties of the pTTDPP-BT phototransistors were strongly dependent on the film annealing temperature. As-spun pTTDPP-BT phototransistors exhibited a low hole mobility of 0.007 cm(2)/(V.s) and a low electron mobility of 0.005 cm(2)/(V.s), which resulted in low photocurrent detection due to the limited transport of the charge carriers. Thermal treatment of the polymer thin films led to a significant enhancement in the carrier mobilities (hole and electron mobilities of 0.066 and 0.115 cm(2)/(V.s), respectively, for 200 degrees C annealing) and thus significantly improved photoresponsive properties. The 200 degrees C-annealed phototransistors showed a wide-range wavelength (405-850 nm) of photoresponse, and a high photocurrent/dark-current ratio of 150 with a fast photoswitching speed of less than 100 ms. This work demonstrates that a dual acceptor-containing low band gap polymer can be an important class of material in broadband photoresponsive transistors, and the crystallinity of the semiconducting polymer layer has a significant effect on the photoresponse characteristics. | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.9, no.22, pp.19011 - 19020 | - |
dc.identifier.doi | 10.1021/acsami.7b03058 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-85020283943 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/24760 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.7b03058 | - |
dc.identifier.wosid | 000403136400069 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Photoresponsive Transistors Based on a Dual Acceptor-Containing Low-Bandgap Polymer | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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