There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 27 | - |
dc.citation.startPage | 275101 | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 51 | - |
dc.contributor.author | Choi, Jihye | - |
dc.contributor.author | Lee, Hyeonseung | - |
dc.contributor.author | Jung, Beomsic | - |
dc.contributor.author | Woo, Jeong-Hyun | - |
dc.contributor.author | Kim, Ju-Young | - |
dc.contributor.author | Lee, Kyu-Sung | - |
dc.contributor.author | Jeong, Jeung-Hyun | - |
dc.contributor.author | Choi, Jea-Young | - |
dc.contributor.author | Kim, Won Mok | - |
dc.contributor.author | Lee, Wook Seong | - |
dc.contributor.author | Jeong, Doo Seok | - |
dc.contributor.author | Lee, Taek-Sung | - |
dc.contributor.author | Choi, Doo Jin | - |
dc.contributor.author | Kim, Inho | - |
dc.date.accessioned | 2023-12-21T20:38:11Z | - |
dc.date.available | 2023-12-21T20:38:11Z | - |
dc.date.created | 2018-06-13 | - |
dc.date.issued | 2018-07 | - |
dc.description.abstract | This paper reports the fabrication of crystalline silicon passivated emitter rear totally diffused (c-Si PERT) solar cells with ultra-thin p-type wafers 50 mu m in thickness. Co-diffusion of boron and phosphorus in a single rapid thermal processing cycle, and an Al spin-on glass postcuring process were developed to remove the boron rich layer which is detrimental to c-Si solar cells. Co-diffusion was carried out with spin-on diffusion sources using boric acid and a P spin on dopant for simple and cost-effective emitter and back surface field (BSF) formation processes. The fabricated ultra-thin c-Si PERT cell featured an open circuit voltage (Voc) of 0.575 V, a short circuit current density (J(sc)) of 35.8 mA cm(-2), a fill factor of 0.725, and a power conversion efficiency of 15.0%. The efficiency has improved by 2% compared with the standard structure cell with Al-BSF using thin evaporated Al 2 mu m in thickness. Along with cell output parameters, the flexural strength and critical bending radius were measured by a four point bending test, and the results showed that the solar cells with thinner rear Al electrodes are more applicable for a flexible solar cell device. | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.51, no.27, pp.275101 | - |
dc.identifier.doi | 10.1088/1361-6463/aabf6d | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.scopusid | 2-s2.0-85049338129 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/24206 | - |
dc.identifier.url | http://iopscience.iop.org/article/10.1088/1361-6463/aabf6d/meta | - |
dc.identifier.wosid | 000435199600001 | - |
dc.language | 영어 | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | co-diffusion of boron and phosphorus | - |
dc.subject.keywordAuthor | ultra-thin Si solar cell | - |
dc.subject.keywordAuthor | boron rich layer | - |
dc.subject.keywordAuthor | critical bending radius | - |
dc.subject.keywordPlus | N-TYPE SILICON | - |
dc.subject.keywordPlus | BOW | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.