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dc.citation.endPage 3684 -
dc.citation.number 7 -
dc.citation.startPage 3678 -
dc.citation.title JOURNAL OF ELECTRONIC MATERIALS -
dc.citation.volume 47 -
dc.contributor.author Arif, Mohd. -
dc.contributor.author Sanger, Amit -
dc.contributor.author Vilarinho, Paula M. -
dc.contributor.author Singh, Arun -
dc.date.accessioned 2023-12-21T20:38:15Z -
dc.date.available 2023-12-21T20:38:15Z -
dc.date.created 2018-06-12 -
dc.date.issued 2018-07 -
dc.description.abstract Nanocrystalline ZnO thin films were deposited on glass substrate via sol-gel dip-coating technique then annealed at 300°C, 400°C, and 500°C for 1 h. Their optical, structural, and morphological properties were studied using ultraviolet-visible (UV-Vis) spectrophotometry, x-ray diffraction (XRD) analysis, and scanning electron microscopy (SEM). XRD diffraction revealed that the crystalline nature of the thin films increased with increasing annealing temperature. The c-axis orientation improved, and the grain size increased, as indicated by increased intensity of the (002) plane peak at 2θ = 34.42° corresponding to hexagonal ZnO crystal. The average crystallite size of the thin films ranged from 13 nm to 23 nm. Increasing the annealing temperature resulted in larger crystallite size and higher crystallinity with increased surface roughness. The grain size according to SEM analysis was in good agreement with the x-ray diffraction data. The optical bandgap of the thin films narrowed with increasing annealing temperature, lying in the range of 3.14 eV to 3.02 eV. The transmission of the thin films was as high as 94% within the visible region. The thickness of the thin films was 400 nm, as measured by ellipsometry, after annealing at the different temperatures of 300°C, 400°C, and 500°C. -
dc.identifier.bibliographicCitation JOURNAL OF ELECTRONIC MATERIALS, v.47, no.7, pp.3678 - 3684 -
dc.identifier.doi 10.1007/s11664-018-6217-6 -
dc.identifier.issn 0361-5235 -
dc.identifier.scopusid 2-s2.0-85045417753 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/24204 -
dc.identifier.url https://link.springer.com/article/10.1007%2Fs11664-018-6217-6 -
dc.identifier.wosid 000434278000037 -
dc.language 영어 -
dc.publisher SPRINGER -
dc.title Effect of Annealing Temperature on Structural and Optical Properties of Sol-Gel-Derived ZnO Thin Films -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied -
dc.relation.journalResearchArea Engineering; Materials Science; Physics -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor SEM -
dc.subject.keywordAuthor sol–gel -
dc.subject.keywordAuthor thin film -
dc.subject.keywordAuthor UV–Vis spectroscopy -
dc.subject.keywordAuthor XRD -
dc.subject.keywordAuthor ZnO -
dc.subject.keywordPlus SILICON-CARBIDE NANOCAULIFLOWERS -
dc.subject.keywordPlus PULSED-LASER DEPOSITION -
dc.subject.keywordPlus PHOTOCATALYTIC ACTIVITY -
dc.subject.keywordPlus POLAR SURFACES -
dc.subject.keywordPlus NANOSTRUCTURES -
dc.subject.keywordPlus GROWTH -
dc.subject.keywordPlus DIODE -
dc.subject.keywordPlus ROUTE -
dc.subject.keywordPlus LIGHT -

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