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Kim, Ju-Young
Robust Multifunctional Materials Lab
Research Interests
  • Flexible / stretchable devices, nano-mechanics, nanoporous metal, materials reliability

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Flaw-Containing Alumina Hollow Nanostructures Have Ultrahigh Fracture Strength To Be Incorporated into High-Efficiency GaN Light-Emitting Diodes

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Title
Flaw-Containing Alumina Hollow Nanostructures Have Ultrahigh Fracture Strength To Be Incorporated into High-Efficiency GaN Light-Emitting Diodes
Author
Kang, Sung-gyuMoon, DaeyoungJang, JeonghwanKim, Ju-YoungSuh, Jin-YooYoon, EuijoonHan, Heung NamChoi, In-suk
Issue Date
2018-02
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.18, no.2, pp.1323 - 1330
Abstract
In the present study, we found that alpha-alumina hollow nanoshell structure can exhibit an ultrahigh fracture strength even though it contains a significant number of nanopores. By systematically performing in situ mechanical testing and finite element simulations, we could measure that the fracture strength of an alpha-alumina hollow nanoshell structure is about four times higher than that of the conventional bulk size alpha-alumina. The high fracture strength of the alpha-alumina hollow nanoshell structure can be explained in terms of conventional fracture mechanics, in that the position and size of the nanopores are the most critical factors determining the fracture strength, even at the nanoscales. More importantly, by deriving a fundamental understanding, we would be able to provide guidelines for the design of reliable ceramic nanostructures for advanced GaN light-emitting diodes (LEDs). To that end, we demonstrated how our ultrastrong alpha-alumina hollow nanoshell structures could be successfully incorporated into GaN LEDs, thereby greatly improving the luminous efficiency and output power of the LEDs by 2.2 times higher than that of conventional GaN LEDs.
URI
https://scholarworks.unist.ac.kr/handle/201301/23875
URL
https://pubs.acs.org/doi/10.1021/acs.nanolett.7b05009
DOI
10.1021/acs.nanolett.7b05009
ISSN
1530-6984
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