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Lah, Myoung Soo
Frontier Energy Storage Material Lab.
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dc.citation.endPage 2421 -
dc.citation.number 7 -
dc.citation.startPage 2415 -
dc.citation.title DALTON TRANSACTIONS -
dc.citation.volume 47 -
dc.contributor.author Kim, Euk Hyun -
dc.contributor.author Lim, Min Hyuk -
dc.contributor.author Lah, Myoung Soo -
dc.contributor.author Koo, Sang Man -
dc.date.accessioned 2023-12-21T21:10:12Z -
dc.date.available 2023-12-21T21:10:12Z -
dc.date.created 2018-03-12 -
dc.date.issued 2018-02 -
dc.description.abstract Heteroleptic titanium alkoxides with three different ligands, i.e., [Ti((OPr)-Pr-i)(X)(Y)] (X = tridentate, Y = bidentate ligands), were synthesized to find efficient metal organic chemical vapor deposition (MOCVD) precursors for TiO2 thin films. Acetylacetone (acacH) or 2,2,6,6-tetramethyl-3,5-heptanedione (thdH) was employed as a bidentate ligand, while N-methyldiethanolamine (MDEA) was employed as a tridentate ligand. It was expected that the oxygen and moisture susceptibility of titanium alkoxides, as well as their tendency to form oligomers, would be greatly reduced by placing multidentate and bulky ligands around the center Ti atom. The synthesized heteroleptic titanium alkoxides were characterized both physicochemically and crystallographically, and their thermal behaviors were also investigated. [Ti((OPr)-Pr-i)(MDEA)(thd)] was found to be monomeric and stable against moisture; it also showed good volatility in the temperature window between volatilization and decomposition. This material was used as a single-source precursor during MOCVD to generate TiO2 thin films on silicon wafers. The high thermal stability of [Ti((OPr)-Pr-i)(MDEA)(thd)] enabled the fabrication of TiO2 films over a wide temperature range, with steady growth rates between 500 and 800 degrees C. -
dc.identifier.bibliographicCitation DALTON TRANSACTIONS, v.47, no.7, pp.2415 - 2421 -
dc.identifier.doi 10.1039/c7dt04894g -
dc.identifier.issn 1477-9226 -
dc.identifier.scopusid 2-s2.0-85042102115 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/23852 -
dc.identifier.url http://pubs.rsc.org/en/Content/ArticleLanding/2018/DT/C7DT04894G#!divAbstract -
dc.identifier.wosid 000424911300033 -
dc.language 영어 -
dc.publisher ROYAL SOC CHEMISTRY -
dc.title Synthesis and characterization of heteroleptic titanium MOCVD precursors for TiO2 thin films -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Inorganic & Nuclear -
dc.relation.journalResearchArea Chemistry -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus CHEMICAL-VAPOR-DEPOSITION -
dc.subject.keywordPlus LIQUID INJECTION MOCVD -
dc.subject.keywordPlus TIO2/SIO2 FILMS -
dc.subject.keywordPlus COMPLEXES -
dc.subject.keywordPlus ALKOXIDE -
dc.subject.keywordPlus PRESSURE -

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