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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 835 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 833 | - |
dc.citation.title | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.volume | 27 | - |
dc.contributor.author | Ahn, Hyunjin | - |
dc.contributor.author | Baek, Seungjun | - |
dc.contributor.author | Ilku Nam | - |
dc.contributor.author | An, Deokgi | - |
dc.contributor.author | Lee, Jae Kyung | - |
dc.contributor.author | Jeong, Minsu | - |
dc.contributor.author | Kim, Bo-Eun | - |
dc.contributor.author | Choi, Jaehyouk | - |
dc.contributor.author | Lee, Ockgoo | - |
dc.date.accessioned | 2023-12-21T21:46:02Z | - |
dc.date.available | 2023-12-21T21:46:02Z | - |
dc.date.created | 2017-09-25 | - |
dc.date.issued | 2017-09 | - |
dc.description.abstract | This letter presents a fully integrated dual-mode power amplifier (PA) with an autotransformer-based parallel combining transformer (ABPCT), fabricated with a standard 40-nm CMOS process. In comparison with a parallel combining transformer, the proposed ABPCT can offer high-efficiency performance in both high-power (HP) and low-power (LP) modes, and does so with a compact die area. With an 802.11g signal (64-QAM 54 Mbps) of 20-MHz channel bandwidth, the fully integrated dual-mode PA achieves 19.7 and 15.7 dBm average output powers with PAEs of 17.1% and 13%, in HP and LP modes, respectively, while satisfying a -25 dB error vector magnitude and spectral mask requirements. Operating the PA in the LP mode can save more than 40% of the current consumption at a 10-dBm average output power when compared with that in the HP mode. | - |
dc.identifier.bibliographicCitation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.27, no.9, pp.833 - 835 | - |
dc.identifier.doi | 10.1109/LMWC.2017.2734762 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.scopusid | 2-s2.0-85028473765 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/22730 | - |
dc.identifier.url | http://ieeexplore.ieee.org/document/8011467 | - |
dc.identifier.wosid | 000409525900021 | - |
dc.language | 영어 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A Fully Integrated Dual-Mode CMOS Power Amplifier With an Autotransformer-Based Parallel Combining Transformer | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalResearchArea | Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | CMOS technology | - |
dc.subject.keywordAuthor | dual-mode power control | - |
dc.subject.keywordAuthor | high efficiency | - |
dc.subject.keywordAuthor | power amplifier (PA) | - |
dc.subject.keywordAuthor | power combining transformer | - |
dc.subject.keywordAuthor | WLAN | - |
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