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DC Field | Value | Language |
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dc.citation.endPage | 10652 | - |
dc.citation.number | 30 | - |
dc.citation.startPage | 10647 | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 9 | - |
dc.contributor.author | Park, Youngsin | - |
dc.contributor.author | Han, Sang Wook | - |
dc.contributor.author | Chan, Christopher C. S. | - |
dc.contributor.author | Reid, Benjamin P. L. | - |
dc.contributor.author | Taylor, Robert A. | - |
dc.contributor.author | Kim, Nammee | - |
dc.contributor.author | Jo, Yongcheol | - |
dc.contributor.author | Im, Hyunsik | - |
dc.contributor.author | Kim, Kwang S. | - |
dc.date.accessioned | 2023-12-21T22:06:34Z | - |
dc.date.available | 2023-12-21T22:06:34Z | - |
dc.date.created | 2017-08-26 | - |
dc.date.issued | 2017-08 | - |
dc.description.abstract | Due to its unique layer-number dependent electronic band structure and strong excitonic features, atomically thin MoS2 is an ideal 2D system where intriguing photoexcited-carrier-induced phenomena can be detected in excitonic luminescence. We perform micro-photoluminescence (PL) measurements and observe that the PL peak redshifts nonlinearly in mono-and bi-layer MoS2 as the excitation power is increased. The excited carrier-induced optical bandgap shrinkage is found to be proportional to n(4/3), where n is the optically-induced free carrier density. The large exponent value of 4/3 is explicitly distinguished from a typical value of 1/3 in various semiconductor quantum well systems. The peculiar n(4/3) dependent optical bandgap redshift may be due to the interplay between bandgap renormalization and reduced exciton binding energy. | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.9, no.30, pp.10647 - 10652 | - |
dc.identifier.doi | 10.1039/c7nr01834g | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.scopusid | 2-s2.0-85027032338 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/22597 | - |
dc.identifier.url | http://pubs.rsc.org/en/Content/ArticleLanding/2017/NR/C7NR01834G#!divAbstract | - |
dc.identifier.wosid | 000406847800013 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Interplay between many body effects and Coulomb screening in the optical bandgap of atomically thin MoS2 | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | STRONG PHOTOLUMINESCENCE ENHANCEMENT | - |
dc.subject.keywordPlus | SEMICONDUCTOR QUANTUM-WELLS | - |
dc.subject.keywordPlus | GAP RENORMALIZATION | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | VALLEY POLARIZATION | - |
dc.subject.keywordPlus | ELECTRON-ELECTRON | - |
dc.subject.keywordPlus | ABSORPTION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | EXCITONS | - |
dc.subject.keywordPlus | CARRIERS | - |
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