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정후영

Jeong, Hu Young
UCRF Electron Microscopy group
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dc.citation.number 15 -
dc.citation.startPage 1700476 -
dc.citation.title ADVANCED MATERIALS INTERFACES -
dc.citation.volume 4 -
dc.contributor.author Park, Young Ran -
dc.contributor.author Choi, Kyoung Soon -
dc.contributor.author Kim, Jong Chan -
dc.contributor.author Seo, Young Soo -
dc.contributor.author Kim, Soo Young -
dc.contributor.author Kim, Yong-Jin -
dc.contributor.author Choi, Won Kook -
dc.contributor.author Jeong, Hu Young -
dc.contributor.author Yang, Woo Seok -
dc.contributor.author Hong, Young Joon -
dc.date.accessioned 2023-12-21T22:06:41Z -
dc.date.available 2023-12-21T22:06:41Z -
dc.date.created 2017-07-31 -
dc.date.issued 2017-08 -
dc.description.abstract This study investigates the effect of graphene oxide (GO) interlayer on electrical and electroluminescent (EL) performances of quantum-dot light emitting diodes (QD-LEDs) with poly(N-vinylcarbazole, PVK)/V2O5- x hole transport layers. The control QD-LEDs basically consist of multilayer heterojunctions of hole transport/injection PVK/V2O5- x bilayers, QD light emission layer, and electron transport ZnO nanoparticle layer, all of which are sequentially spin coated on indium-tin-oxide/glass substrates. The QD-LEDs with GO interlayer inserted between PVK and V2O5- x present superior electrical rectification and EL efficiency than those without GO interlayer. The hole-only devices with GO interlayer evidence higher hole conduction capability than those without GO by an order of magnitude. From ultraviolet photoelectron spectroscopy analysis, the hole transport enhancement in PVK/GO/V2O5- x heterojunctions is found to be responsible for reduced height of the highest hole barrier at QD/PVK interface from 1.74 to 0.75 eV by means of downshift of energy levels of PVK. Such energy level variation of PVK is discussed in terms of heterointerfacial orbital hybridization at PVK/V2O5- x, which are validated by diverse spectroscopies. The ability of GO interlayer to shift the PVK energy levels can be exploited for developing high-performance optoelectronics and electronics with hole transport organic/transition metal oxide heterojunctions. -
dc.identifier.bibliographicCitation ADVANCED MATERIALS INTERFACES, v.4, no.15, pp.1700476 -
dc.identifier.doi 10.1002/admi.201700476 -
dc.identifier.issn 2196-7350 -
dc.identifier.scopusid 2-s2.0-85023644281 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/22593 -
dc.identifier.url http://onlinelibrary.wiley.com/doi/10.1002/admi.201700476/abstract -
dc.identifier.wosid 000406767300015 -
dc.language 영어 -
dc.publisher WILEY -
dc.title Graphene Oxide Inserted Poly(N-Vinylcarbazole)/Vanadium Oxide Hole Transport Heterojunctions for High-Efficiency Quantum-Dot Light-Emitting Diodes -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Chemistry; Materials Science -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Electronic energy level alignment -
dc.subject.keywordAuthor Graphene oxide -
dc.subject.keywordAuthor Hole transport layers -
dc.subject.keywordAuthor Quantum-dot light-emitting diodes -
dc.subject.keywordAuthor Vanadium pentoxide -
dc.subject.keywordPlus ORGANIC SOLAR-CELLS -
dc.subject.keywordPlus INDIUM-TIN-OXIDE -
dc.subject.keywordPlus INJECTION LAYER -
dc.subject.keywordPlus ELECTRONIC-STRUCTURE -
dc.subject.keywordPlus LOW-TEMPERATURE -
dc.subject.keywordPlus MOLECULAR-ORIENTATION -
dc.subject.keywordPlus RAMAN-SPECTROSCOPY -
dc.subject.keywordPlus MOLYBDENUM OXIDE -
dc.subject.keywordPlus DIRECT REDUCTION -
dc.subject.keywordPlus METAL-OXIDES -

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