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DC Field | Value | Language |
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dc.citation.endPage | 9400 | - |
dc.citation.number | 27 | - |
dc.citation.startPage | 9392 | - |
dc.citation.title | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | - |
dc.citation.volume | 139 | - |
dc.contributor.author | Fu, Deyi | - |
dc.contributor.author | Zhao, Xiaoxu | - |
dc.contributor.author | Zhang, Yu-Yang | - |
dc.contributor.author | Li, Lingjun | - |
dc.contributor.author | Xu, Hai | - |
dc.contributor.author | Jang, A-Rang | - |
dc.contributor.author | Yoon, Seong In | - |
dc.contributor.author | Song, Peng | - |
dc.contributor.author | Poh, Sock Mui | - |
dc.contributor.author | Ren, Tianhua | - |
dc.contributor.author | Ding, Zijing | - |
dc.contributor.author | Fu, Wei | - |
dc.contributor.author | Shin, Tae Joo | - |
dc.contributor.author | Shin, Hyeon Suk | - |
dc.contributor.author | Pantelides, Sokrates T. | - |
dc.contributor.author | Zhou, Wu | - |
dc.contributor.author | Loh, Kian Ping | - |
dc.date.accessioned | 2023-12-21T22:07:57Z | - |
dc.date.available | 2023-12-21T22:07:57Z | - |
dc.date.created | 2017-07-31 | - |
dc.date.issued | 2017-07 | - |
dc.description.abstract | Atomically thin molybdenum disulfide (MoS2), a direct-band-gap semiconductor, is promising for applications in electronics and optoelectronics, but the scalable synthesis of highly crystalline film remains challenging. Here we report the successful epitaxial growth of a continuous, uniform, highly crystalline monolayer MoS2 film on hexagonal boron nitride (h-BN) by molecular beam epitaxy. Atomic force microscopy and electron microscopy studies reveal that MoS2 grown on h-BN primarily consists of two types of nucleation grains (0° aligned and 60° antialigned domains). By adopting a high growth temperature and ultralow precursor flux, the formation of 60° antialigned grains is largely suppressed. The resulting perfectly aligned grains merge seamlessly into a highly crystalline film. Large-scale monolayer MoS2 film can be grown on a 2 in. h-BN/sapphire wafer, for which surface morphology and Raman mapping confirm good spatial uniformity. Our study represents a significant step in the scalable synthesis of highly crystalline MoS2 films on atomically flat surfaces and paves the way to large-scale applications. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.139, no.27, pp.9392 - 9400 | - |
dc.identifier.doi | 10.1021/jacs.7b05131 | - |
dc.identifier.issn | 0002-7863 | - |
dc.identifier.scopusid | 2-s2.0-85024390069 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/22426 | - |
dc.identifier.url | http://pubs.acs.org/doi/abs/10.1021/jacs.7b05131 | - |
dc.identifier.wosid | 000405642400044 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Molecular Beam Epitaxy of Highly Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | TRANSPORT-PROPERTIES | - |
dc.subject.keywordPlus | ATOMIC LAYERS | - |
dc.subject.keywordPlus | DIRECT GROWTH | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | PIEZOELECTRICITY | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | HIGH-QUALITY MONOLAYER | - |
dc.subject.keywordPlus | SINGLE-LAYER MOS2 | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | GRAIN-BOUNDARIES | - |
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