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DC Field | Value | Language |
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dc.citation.endPage | 98 | - |
dc.citation.startPage | 91 | - |
dc.citation.title | SYNTHETIC METALS | - |
dc.citation.volume | 228 | - |
dc.contributor.author | Ryu, Seung Yoon | - |
dc.contributor.author | Seo, Ji hoon | - |
dc.contributor.author | Hafeez, Hassan | - |
dc.contributor.author | Song, Myungkwan | - |
dc.contributor.author | Shin, Jun Young | - |
dc.contributor.author | Kim, Dong Hyun | - |
dc.contributor.author | Jung, Yong Chan | - |
dc.contributor.author | Kim, Chang-Su | - |
dc.date.accessioned | 2023-12-21T22:12:05Z | - |
dc.date.available | 2023-12-21T22:12:05Z | - |
dc.date.created | 2017-05-22 | - |
dc.date.issued | 2017-06 | - |
dc.description.abstract | Improvement in the device performance of hydrogenated amorphous silicon (a-Si:H) thin-film solar cells (TFSCs) without hazardous doping gases and complex processes has been a long-standing aim for many researchers. In this work, we replaced the n-type Si layer in an a-Si:H TFSC with an interfacial dipole layer of conjugated polymer electrolyte material, poly [(9,9-bis(3'-(N,N-dimethylamino) propyl)-2,7-fiuorene)-alt-2,7-(9,9-dioctylfluorene) (PFN), while keeping the conventional layer scheme. The addition of PFN eliminated the process complexity, improved the device performance, and generated a built-in potential (V-bi) across the p-type Si layer. The power conversion efficiency of the optimized device reached a maximum of 7.17%, which is significant when using a toxicant-free layer. The open-circuit voltage was improved to 0.80 V from 0.47 V in comparison to a reference a-Si:H TFSC without PFN, and the stability in light and dark conditions were greatly enhanced. The fill factor was increased from 0.45 to 0.59 because of the enhancement in shunt/series resistance. The improvement in device performance is mainly due to the creation of an interfacial dipole by the PFN layer, which generated the VIA across the p-type Si layer, decreased the potential barrier between the i-Si layer and aluminum cathode, and consequently reduced the defects resulting from the coating of the i-Si layer and enhanced electron extraction. | - |
dc.identifier.bibliographicCitation | SYNTHETIC METALS, v.228, pp.91 - 98 | - |
dc.identifier.doi | 10.1016/j.synthmet.2017.04.014 | - |
dc.identifier.issn | 0379-6779 | - |
dc.identifier.scopusid | 2-s2.0-85018477052 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/21970 | - |
dc.identifier.url | http://www.sciencedirect.com/science/article/pii/S0379677917301054 | - |
dc.identifier.wosid | 000401599600014 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Improved hydrogenated amorphous silicon thin-film solar cells realized by replacing n-type Si layer with PFN interfacial layer | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Condensed Matter; Polymer Science | - |
dc.relation.journalResearchArea | Materials Science; Physics; Polymer Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | A-Si:H thin-film solar cells | - |
dc.subject.keywordAuthor | n-type dopant-free solar cells | - |
dc.subject.keywordAuthor | PFN interfacial dipole layer | - |
dc.subject.keywordPlus | POWER-CONVERSION EFFICIENCY | - |
dc.subject.keywordPlus | OPEN-CIRCUIT VOLTAGES | - |
dc.subject.keywordPlus | CONJUGATED POLYELECTROLYTES | - |
dc.subject.keywordPlus | ELECTRON INJECTION | - |
dc.subject.keywordPlus | BILAYER CATHODE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | PHOTOVOLTAICS | - |
dc.subject.keywordPlus | ALUMINUM | - |
dc.subject.keywordPlus | ORIGIN | - |
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