Full metadata record
DC Field | Value | Language |
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dc.citation.startPage | 14734 | - |
dc.citation.title | NATURE COMMUNICATIONS | - |
dc.citation.volume | 8 | - |
dc.contributor.author | Lee, Juwon | - |
dc.contributor.author | Pak, Sangyeon | - |
dc.contributor.author | Lee, Young-Woo | - |
dc.contributor.author | Cho, Yuljae | - |
dc.contributor.author | Hong, John | - |
dc.contributor.author | Giraud, Paul | - |
dc.contributor.author | Shin, Hyeon Suk | - |
dc.contributor.author | Morris, Stephen M. | - |
dc.contributor.author | Sohn, Jung Inn | - |
dc.contributor.author | Cha, SeungNam | - |
dc.contributor.author | Kim, Jong Min | - |
dc.date.accessioned | 2023-12-21T22:37:46Z | - |
dc.date.available | 2023-12-21T22:37:46Z | - |
dc.date.created | 2017-04-07 | - |
dc.date.issued | 2017-03 | - |
dc.description.abstract | Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of similar to 4,700 (73.4 dB) coupled with a low OFF-state current (< 4pA), and a long storage lifetime of over 10(4) s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices. | - |
dc.identifier.bibliographicCitation | NATURE COMMUNICATIONS, v.8, pp.14734 | - |
dc.identifier.doi | 10.1038/ncomms14734 | - |
dc.identifier.issn | 2041-1723 | - |
dc.identifier.scopusid | 2-s2.0-85016150850 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/21876 | - |
dc.identifier.url | https://www.nature.com/articles/ncomms14734 | - |
dc.identifier.wosid | 000397284300001 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Monolayer optical memory cells based on artificial trap-mediated charge storage and release | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | MOLYBDENUM-DISULFIDE | - |
dc.subject.keywordPlus | MOS2 TRANSISTORS | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | PHOTOTRANSISTORS | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
dc.subject.keywordPlus | TRANSITION | - |
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