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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Optical and microstructural properties of InGaN/GaN multiple quantum wells with embedded graphene coating

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Title
Optical and microstructural properties of InGaN/GaN multiple quantum wells with embedded graphene coating
Author
Bae, Goh-MyeongChoi, Jae-KyungCho, Chu-YoungLee, Jong-HwaKwak, JinsungNa, HyunseokPark, Kyung-HoPark, KibogKwon, Soon-Yong
Issue Date
2017-08
Publisher
ELSEVIER SCIENCE SA
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v.713, pp.87 - 94
Abstract
We investigate the effects of embedded graphene coating on the optical and microstructural properties of ultrathin InGaN/GaN multiple quantum wells (MQWs). The InGaN/GaN MQWs grown on graphene-buffered GaN templates displayed enhanced internal quantum efficiency compared to conventional ones and showed the internal electric field effect-free characteristic, desirable for general lighting applications. These phenomena were attributed to the enhancement of potential fluctuation with increased indium content and negligible piezoelectric polarization in ultrathin InGaN QWs, respectively. It was found that the atomically rough surface of GaN induced by embedded graphene coating efficiently relieved the biaxial compressive strain in the ultrathin InGaN/GaN QWs and enhanced the In incorporation efficiency during the InGaN growth, suggesting the potential use of atomic-thick carbon layer in niche optoelectronic applications.
URI
https://scholarworks.unist.ac.kr/handle/201301/21859
URL
www.sciencedirect.com/science/article/pii/S0925838817313191
DOI
10.1016/j.jallcom.2017.04.120
ISSN
0925-8388
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