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- Kim, Hak Sun
- Internet of Things System Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 880 | - |
| dc.citation.number | 8 | - |
| dc.citation.startPage | 867 | - |
| dc.citation.title | 한국통신학회논문지 | - |
| dc.citation.volume | 17 | - |
| dc.contributor.author | 최병하 | - |
| dc.contributor.author | 김학선 | - |
| dc.contributor.author | 김은노 | - |
| dc.contributor.author | 이형재 | - |
| dc.date.accessioned | 2023-12-22T13:07:15Z | - |
| dc.date.available | 2023-12-22T13:07:15Z | - |
| dc.date.created | 2017-03-15 | - |
| dc.date.issued | 1992-08 | - |
| dc.description.abstract | In this paper, a circuit design techniques for improving the voltage gain of the GaAs MESFET single amplifier is presented. Also, various types of existing current mirror and proposed current mirror of new configuration are compared. To obtain the high differential mode gain and low common mode gain, bootstrap gain enhancement technique is used and common mode feedback ins employed in the design of differential amplifier. The simulation results show that designed differential amplifier has differential gain of 57.66dB, unity gain frequency of 23.26GHz. Also, differential amplifier using common mode feedback with alternative negative current mirror has CMRR of 83.98dB, slew rate of 3500 V/㎲. | - |
| dc.identifier.bibliographicCitation | 한국통신학회논문지, v.17, no.8, pp.867 - 880 | - |
| dc.identifier.issn | 1226-4717 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/21651 | - |
| dc.identifier.url | http://www.dbpia.co.kr/Journal/ArticleDetail/NODE00211928 | - |
| dc.language | 한국어 | - |
| dc.publisher | 한국통신학회 | - |
| dc.title.alternative | Design of High Gain Differential Amplifier Using GaAs MESFET`s | - |
| dc.title | 갈륨비소 MESFET를 이용한 고이득 차동 증폭기 설계 | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | other | - |
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