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dc.citation.endPage 5250 -
dc.citation.number 9A -
dc.citation.startPage 5247 -
dc.citation.title JAPANESE JOURNAL OF APPLIED PHYSICS -
dc.citation.volume 40 -
dc.contributor.author Hwang, Younghun -
dc.contributor.author Kim, Hyekyeong -
dc.contributor.author Chung, Moonsung -
dc.contributor.author Um, Youngho -
dc.contributor.author Park, Hyoyeol -
dc.contributor.author Yoo, Pyoungkil -
dc.date.accessioned 2023-12-22T11:44:53Z -
dc.date.available 2023-12-22T11:44:53Z -
dc.date.created 2017-02-23 -
dc.date.issued 2001-04 -
dc.description.abstract Spectroscopic ellipsometry measurements of the complex dielectric function of a series of Cd1-xMnxTe (0 ≤ x ≤ 0.7) films grown on (100) GaAs by hot wall epitaxy have been performed in the 1.5-5.5 eV photon energy range at room temperature. The measured data were analyzed by fitting the second-derivative spectra (d2ε/dω2) with a theoretical model, namely, the standard critical-point (SCP) line shapes. It was found that the SCP model explains the measured derivative spectra successfully. The composition dependence of the critical-point (CP) energies and Lorentzian broadening (Γ) was determined. -
dc.identifier.bibliographicCitation JAPANESE JOURNAL OF APPLIED PHYSICS, v.40, no.9A, pp.5247 - 5250 -
dc.identifier.issn 0021-4922 -
dc.identifier.scopusid 2-s2.0-0035456895 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/21622 -
dc.identifier.url http://iopscience.iop.org/article/10.1143/JJAP.40.5247/meta;jsessionid=E0EFDA982E1475E7CE188DACB4ADB6FE.c2.iopscience.cld.iop.org -
dc.identifier.wosid 000171677200010 -
dc.language 영어 -
dc.publisher JAPAN SOC APPLIED PHYSICS -
dc.title Spectroscopic Ellipsometry Studies of Cd1−xMnxTe Films Grown on GaAs -
dc.type Article -
dc.description.journalRegisteredClass scopus -

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