JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.3, pp.672 - 674
Abstract
We have grown MnIn2Se4 bulk single crystal by using the vertical-gradient solidification method. We have found that MnIn 2Se4 is a direct-gap semiconductor with energy gap E g = 1.853 eV at 300 K, based on optical-absorption measurement. From magnetic-property measurement, we have observed spin glass ordering at low temperature.