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dc.citation.number 6 -
dc.citation.startPage 063914 -
dc.citation.title JOURNAL OF APPLIED PHYSICS -
dc.citation.volume 109 -
dc.contributor.author Hwang, Younghun -
dc.contributor.author Choi, Jeongyong -
dc.contributor.author Dung, Dang Duc -
dc.contributor.author Shin, Yooleemi -
dc.contributor.author Cho, Sunglae -
dc.date.accessioned 2023-12-22T06:14:48Z -
dc.date.available 2023-12-22T06:14:48Z -
dc.date.created 2017-02-23 -
dc.date.issued 2011-03 -
dc.description.abstract Ferrimagnetic Mn2As thin films with perpendicular magnetic anisotropy were successfully grown on Si(100) by molecular-beam epitaxy. From the reflection high-energy electron diffraction and X-ray diffraction patterns, the orientation of the Mn2As film on Si was along the c-axis in the tetragonal crystal structure. Mn2As film exhibited ferrimagnetic ordering at temperatures greater than 300 K, which differs from antiferromagnetic or paramagnetic behaviors in the bulk form. The magnetic moment of Mn2As determined by saturated magnetization was 0.51 µB per unit cell. -
dc.identifier.bibliographicCitation JOURNAL OF APPLIED PHYSICS, v.109, no.6, pp.063914 -
dc.identifier.doi 10.1063/1.3552295 -
dc.identifier.issn 0021-8979 -
dc.identifier.scopusid 2-s2.0-79953658146 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/21575 -
dc.identifier.url http://aip.scitation.org/doi/10.1063/1.3552295 -
dc.identifier.wosid 000289149900092 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title Perpendicular ferrimagnetism in strained Mn2As film -
dc.type Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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