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| DC Field | Value | Language |
|---|---|---|
| dc.citation.number | 6 | - |
| dc.citation.startPage | 063912 | - |
| dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 109 | - |
| dc.contributor.author | Dung, Dang Duc | - |
| dc.contributor.author | Yun, Won | - |
| dc.contributor.author | Hwang, Younghun | - |
| dc.contributor.author | Feng, Wuwei | - |
| dc.contributor.author | Hong, Soon Cheol | - |
| dc.contributor.author | Cho, Sunglae | - |
| dc.date.accessioned | 2023-12-22T06:14:50Z | - |
| dc.date.available | 2023-12-22T06:14:50Z | - |
| dc.date.created | 2017-02-23 | - |
| dc.date.issued | 2011-03 | - |
| dc.description.abstract | We report on the carrier type changes of the p-type for as-grown Mn:Ge films to n-type for post-annealed samples in a hydrogen ambient. The hydrogen-annealed samples exhibit the increased Curie temperature, from 165 to 198 K, and the enhanced magnetic moment, from 0.78 to 1.10 μB/Mn. The first principles calculation using the all-electron full-potential linearized augmented plane wave method indicates that the addition of an electron carrier strengthens the ferromagnetic coupling between the Mn atoms, while the hole carrier caused it to weaken. | - |
| dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.109, no.6, pp.063912 | - |
| dc.identifier.doi | 10.1063/1.3549676 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.scopusid | 2-s2.0-79953644982 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/21574 | - |
| dc.identifier.url | http://aip.scitation.org/doi/10.1063/1.3549676 | - |
| dc.identifier.wosid | 000289149900090 | - |
| dc.language | 영어 | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Electron mediated/enhanced ferromagnetism in a hydrogen-annealed Mn:Ge magnetic semiconductor | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
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