File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

DingFeng

Ding, Feng
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Dynamic modulation of the transport properties of the LaAlO3/SrTiO3 interface using uniaxial strain

Author(s)
Zhang, FanFang, Yue-WenChan, Ngai YuiLo, Wing ChongLi, Dan FengDuan, Chun-GangDing, FengDai, Ji Yan
Issued Date
2016-06
DOI
10.1103/PhysRevB.93.214427
URI
https://scholarworks.unist.ac.kr/handle/201301/21527
Fulltext
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.214427
Citation
PHYSICAL REVIEW B, v.93, no.21, pp.214427
Abstract
Among the interfacial transport modulations to the LaAlO3/SrTiO3 (LAO/STO) heterostructure, mechanical strain has been proven to be an effective approach by growing the LAO/STO films on different substrates with varying lattice mismatches to STO. However, this lattice-mismatch-induced strain effect is static and biaxial, hindering the study of the strain effect in a dynamic way. In this work we realize dynamic and uniaxial strain to the LAO/STO oxide heterostructure at low temperature, through mechanical coupling from a magnetostrictive template. This anisotropic strain results in symmetry breaking at the interface and induces further splitting of the electronic band structure and therefore produces different conductivities along the x and y in-plane directions. In particular, we observe that along the strained direction the interface conductivity decreases by up to 70% under a tensile strain, while it increases by 6.8% under a compressive strain at 2 K. Also, it is revealed that the modulation on the interfacial transport property can be anisotropic, i.e., the resistance changes differently when an excitation current is parallel or perpendicular to the strain direction. This approach of strain engineering provides another degree of freedom for control of transport properties of oxide heterostructures and opens an additional way to investigate strain effects in materials science.
Publisher
AMER PHYSICAL SOC
ISSN
2469-9950
Keyword
2-DIMENSIONAL ELECTRON-GASTOTAL-ENERGY CALCULATIONSWAVE BASIS-SETHETEROSTRUCTURESFERROMAGNETISMHETEROINTERFACESRTIO3OXIDESSTATEFIELD

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.