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DC Field | Value | Language |
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dc.citation.endPage | 6116 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 6109 | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 16 | - |
dc.contributor.author | Song, Xiuju | - |
dc.contributor.author | Gan, Teng | - |
dc.contributor.author | Nie, Yufeng | - |
dc.contributor.author | Zhuang, Jianing | - |
dc.contributor.author | Sun, Jingyu | - |
dc.contributor.author | Ma, Donglin | - |
dc.contributor.author | Shi, Jianping | - |
dc.contributor.author | Lin, Yuanwei | - |
dc.contributor.author | Ding, Feng | - |
dc.contributor.author | Zhang, Yanfeng | - |
dc.contributor.author | Liu, Zhongfan | - |
dc.date.accessioned | 2023-12-21T23:09:25Z | - |
dc.date.available | 2023-12-21T23:09:25Z | - |
dc.date.created | 2017-03-03 | - |
dc.date.issued | 2016-10 | - |
dc.description.abstract | Vertical heterostructures based on two-dimensional layered materials, such as stacked graphene and hexagonal boron nitride (G/h-BN), have stimulated wide interest in fundamental physics, material sciences and nanoelectronics. To date, it still remains challenging to obtain high quality G/h-BN heterostructures concurrently with controlled nucleation density and thickness uniformity. In this work, with the aid of the well-defined poly(methyl methacrylate) seeds, effective control over the nucleation densities and locations of graphene domains on the predeposited h-BN monolayers was realized, leading to the formation of patterned G/h-BN arrays or continuous films. Detailed spectroscopic and morphological characterizations further confirmed that 435.7% of such monolayer graphene domains were of single-crystalline nature with their domain sizes predetermined throughout seed interspacing. Density functional theory calculations suggested that a self-terminated growth mechanism can be applied for the related graphene growth on h-BN/Cu. In turn, as constructed field-effect transistor arrays based on such synthesized single-crystalline G/h-BN patterning were found to be compatible with fabricating devices with nice and steady performance, hence holding great promise for the development of next generation graphene-based electronics. | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.16, no.10, pp.6109 - 6116 | - |
dc.identifier.doi | 10.1021/acs.nanolett.6b02279 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.scopusid | 2-s2.0-84992747313 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/21523 | - |
dc.identifier.url | http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b02279 | - |
dc.identifier.wosid | 000385469800020 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Seed-Assisted Growth of Single-Crystalline Patterned Graphene Domains on Hexagonal Boron Nitride by Chemical Vapor Deposition | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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