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dc.citation.endPage 491 -
dc.citation.number 1 -
dc.citation.startPage 482 -
dc.citation.title JOURNAL OF THE AMERICAN CHEMICAL SOCIETY -
dc.citation.volume 139 -
dc.contributor.author Li, Xufan -
dc.contributor.author Dong, Jichen -
dc.contributor.author Idrobo, Juan C. -
dc.contributor.author Puretzky, Alexander A. -
dc.contributor.author Rouleau, Christopher M. -
dc.contributor.author Geohegan, David B. -
dc.contributor.author Ding, Feng -
dc.contributor.author Xiao, Kai -
dc.date.accessioned 2023-12-21T22:43:30Z -
dc.date.available 2023-12-21T22:43:30Z -
dc.date.created 2017-02-17 -
dc.date.issued 2017-01 -
dc.description.abstract Understanding the atomistic mechanisms governing the growth of two-dimensional (2D) materials is of great importance in guiding the synthesis of wafer-sized, single-crystalline, high-quality 2D crystals and heterostructures. Etching, in many cases regarded as the reverse process of material growth, has been used to study the growth kinetics of graphene. In this work, we explore a growth-etching-regrowth process of monolayer GaSe crystals, including single-crystalline triangles and irregularly shaped domains formed by merged triangles. We show that the etching begins at a slow rate, creating triangular, truncated triangular, or hexagonally shaped holes that eventually evolve to exclusively triangles that are rotated 60 degrees with respect to the crystalline orientation of the monolayer triangular crystals. The regrowth occurs much faster than etching, reversibly filling the etched holes and then enlarging the size of the monolayer crystals. A theoretical model developed based on kinetic Wulff construction (KWC) theory and density functional theory (DFT) calculations accurately describe the observed morphology evolution of the monolayer GaSe crystals and etched holes during the growth and etching processes, showing that they are governed by the probability of atom attachment/detachment to/from different types of edges with different formation energies of nucleus/dents mediated by chemical potential difference Ait between Ga and Se. Our growth-etching-regrowth study provides not only guidance to understand the growth mechanisms of 2D binary crystals but also a potential method for the synthesis of large, shape-controllable, high-quality single-crystalline 2D crystals and their lateral heterostructures. -
dc.identifier.bibliographicCitation JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.139, no.1, pp.482 - 491 -
dc.identifier.doi 10.1021/jacs.6b11076 -
dc.identifier.issn 0002-7863 -
dc.identifier.scopusid 2-s2.0-85019560863 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/21517 -
dc.identifier.url http://pubs.acs.org/doi/abs/10.1021/jacs.6b11076 -
dc.identifier.wosid 000392036900067 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title Edge-Controlled Growth and Etching of Two-Dimensional GaSe Monolayers -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary -
dc.relation.journalResearchArea Chemistry -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus CHEMICAL-VAPOR-DEPOSITION -
dc.subject.keywordPlus TRANSITION-METAL DICHALCOGENIDES -
dc.subject.keywordPlus SINGLE-CRYSTAL GRAPHENE -
dc.subject.keywordPlus HEXAGONAL BORON-NITRIDE -
dc.subject.keywordPlus LARGE-AREA SYNTHESIS -
dc.subject.keywordPlus GRAIN-BOUNDARIES -
dc.subject.keywordPlus LAYER MOS2 -
dc.subject.keywordPlus VAN -
dc.subject.keywordPlus PHOTORESPONSE -
dc.subject.keywordPlus TRANSISTORS -

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