There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 1410 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1404 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 10 | - |
dc.contributor.author | Wang, Bin | - |
dc.contributor.author | Huang, Ming | - |
dc.contributor.author | Tao, Li | - |
dc.contributor.author | Lee, Sun Hwa | - |
dc.contributor.author | Jang, A-Rang | - |
dc.contributor.author | Li, Bao-Wen | - |
dc.contributor.author | Shin, Hyeon Suk | - |
dc.contributor.author | Akinwande, Deji | - |
dc.contributor.author | Ruoff, Rodney S. | - |
dc.date.accessioned | 2023-12-22T00:12:45Z | - |
dc.date.available | 2023-12-22T00:12:45Z | - |
dc.date.created | 2016-10-21 | - |
dc.date.issued | 2016-01 | - |
dc.description.abstract | We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-Assembled monolayer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm2/Vs) and resistance modulation (up to 12×) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces. | - |
dc.identifier.bibliographicCitation | ACS NANO, v.10, no.1, pp.1404 - 1410 | - |
dc.identifier.doi | 10.1021/acsnano.5b06842 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.scopusid | 2-s2.0-84989950296 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/21015 | - |
dc.identifier.url | http://pubs.acs.org/doi/abs/10.1021/acsnano.5b06842 | - |
dc.identifier.wosid | 000369115800157 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Support-free transfer of ultrasmooth graphene films facilitated by self-Assembled monolayers for electronic devices and patterns | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Gfet | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | Pattern | - |
dc.subject.keywordAuthor | Self-Assembled monolayer | - |
dc.subject.keywordAuthor | Support-free | - |
dc.subject.keywordAuthor | Transfer | - |
dc.subject.keywordAuthor | Ultrasmooth | - |
dc.subject.keywordPlus | CVD-GROWN GRAPHENE | - |
dc.subject.keywordPlus | ELECTROCHEMICAL DELAMINATION | - |
dc.subject.keywordPlus | HIGH-QUALITY | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | METAL | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.