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김광수

Kim, Kwang S.
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dc.citation.endPage 84964 -
dc.citation.number 88 -
dc.citation.startPage 84959 -
dc.citation.title RSC ADVANCES -
dc.citation.volume 6 -
dc.contributor.author Park, Heemin -
dc.contributor.author Choi, Seongsoo -
dc.contributor.author Lee, Paengro -
dc.contributor.author Kim, Jingul -
dc.contributor.author Ryu, Mintae -
dc.contributor.author Kim, Kwang S. -
dc.contributor.author Chung, Jinwook -
dc.date.accessioned 2023-12-21T23:13:47Z -
dc.date.available 2023-12-21T23:13:47Z -
dc.date.created 2016-09-23 -
dc.date.issued 2016-09 -
dc.description.abstract We report that the doping of energetic nitrogen cations (N2 +) on graphene effectively controls the local N-C bonding structures and the π-band of graphene critically depending on ion energy Ek (100 eV ≤ Ek ≤ 500 eV) by using a combined study of photoemission spectroscopy and density functional theory (DFT) calculations. With increasing Ek, we find a phase transformation of the N-C bonding structures from a graphitic phase where nitrogen substitutes carbon to a pyridinic phase where nitrogen loses one of its bonding arms, with a critical energy Eck = 100 eV that separates the two phases. The N2 +-induced changes in the π-band with varying Ek indicate an n-doping effect in the graphitic phase for Ek < Eck but a p-doping effect for the pyridinic graphene for Ek > Eck. We further show that one may control the electron charge density of graphene by two orders of magnitude by varying Ek of N2 + ions within the energy range adopted. Our DFT-based band calculations reproduce the distinct doping effects observed in the π-band of the N2 +-doped graphene and provide an orbital origin of the different doping types. We thus demonstrate that the doping type and electron number density in the N2 + ion-doped SLG can be artificially fine-controlled by adjusting the kinetic energy of incoming N2 + ions. -
dc.identifier.bibliographicCitation RSC ADVANCES, v.6, no.88, pp.84959 - 84964 -
dc.identifier.doi 10.1039/c6ra19511c -
dc.identifier.issn 2046-2069 -
dc.identifier.scopusid 2-s2.0-84987638593 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/20474 -
dc.identifier.url http://pubs.rsc.org/en/Content/ArticleLanding/2016/RA/C6RA19511C#!divAbstract -
dc.identifier.wosid 000384139000046 -
dc.language 영어 -
dc.publisher ROYAL SOC CHEMISTRY -
dc.title Band and bonding characteristics of N2 + ion-doped graphene -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary -
dc.relation.journalResearchArea Chemistry -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus RECENT PROGRESS -
dc.subject.keywordPlus NITROGEN -
dc.subject.keywordPlus DENSITY -
dc.subject.keywordPlus EFFICIENT -
dc.subject.keywordPlus IMPLANTATION -
dc.subject.keywordPlus MONOLAYER -
dc.subject.keywordPlus ATOMS -
dc.subject.keywordPlus GAS -
dc.subject.keywordPlus SET -

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